ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
IPD30N10S3L34ATMA2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET_(75V 120V(. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IPD30N10S3L34ATMA2
- Description：MOSFET_(75V 120V(
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：31mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 29µA
- Gate Charge (Qg) (Max) @ Vgs：31 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1976 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：57W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO252-3-11
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for IPD30N10S3L34ATMA2
Single FETs, MOSFETs Overview
The IPD30N10S3L-34 is an OptiMOS-T N-channel enhancement mode power transistor designed for automotive applications. It features a PG-TO252-3-11 package with a maximum drain-source voltage of 100 V and a continuous drain current of 30 A at 25°C. The device exhibits a maximum on-state resistance of 31 mΩ at VGS=10V and operates within a temperature range of -55°C to +175°C. It includes avalanche testing compliance, MSL1 classification up to 260°C peak reflow, and RoHS compliance.
Single FETs, MOSFETs Feature Summary
- Automotive AEC-Q101 qualified
- OptiMOS-T technology for low on-state resistance
- 100% avalanche tested
- High thermal stability up to 175°C
Single FETs, MOSFETs Applications
- Automotive power switching
- Low-side load switching
- DC-DC converter stages
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix ATMA2 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure that the component meets the required automotive quality standards and environmental conditions for the intended application before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring robust automotive-grade performance with high current handling capabilities. Consider the thermal resistance characteristics and safe operating area when designing heat dissipation solutions. Verify gate drive requirements align with the specified threshold and plateau voltages for optimal switching performance.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS-T family, which combines trench MOSFET technology with planar design advantages. It is engineered for high reliability in demanding environments, offering improved switching characteristics and reduced conduction losses compared to standard MOSFETs.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Do not assume pin-compatible replacements without confirming electrical parameters and package dimensions.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
