ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
IPD60R950C6ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 4.4A TO252-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IPD60R950C6ATMA1
- Description：MOSFET N-CH 600V 4.4A TO252-3
- Series：CoolMOS™ C6
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：4.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：950mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs：13 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：280 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：37W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for IPD60R950C6ATMA1
Single FETs, MOSFETs Overview
The IPD60R950C6ATMA1 is a single N-Channel CoolMOS™ C6 Power Transistor in a PG-TO252 (DPAK) surface-mount package. It features a drain-source breakdown voltage of 600 V and a maximum on-state resistance of 0.95 Ω at 25 °C. The device supports a continuous drain current of 4.4 A and a pulsed current of 12 A, with a typical gate charge of 13 nC. Operating within a temperature range of -55 °C to +150 °C, it offers a power dissipation rating of 37 W.
Single FETs, MOSFETs Feature Summary
- Utilizes superjunction technology for extremely low switching and conduction losses.
- Provides high commutation ruggedness and ease of drive.
- Fully qualified according to JEDEC standards for industrial applications.
Single FETs, MOSFETs Applications
- Power Factor Correction (PFC) stages
- Hard switching PWM stages
- Resonant switching PWM stages
Single FETs, MOSFETs Procurement Notes
Verify the component status before integration, as availability may vary by region. Confirm that the PG-TO252-3 package dimensions match the target PCB footprint. Ensure thermal management solutions account for the specified junction-to-case thermal resistance values under expected operating loads.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring robust performance in high-voltage environments. The low figure-of-merit facilitates efficient operation in compact power supplies. Evaluate the thermal characteristics against the specific cooling requirements of the application to ensure reliable operation across the full temperature range.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon CoolMOS™ C6 series, which combines superjunction principles with advanced manufacturing. The series targets efficiency improvements in various power conversion topologies. The DPAK variant provides a cost-effective surface-mount solution for medium-power applications.
Single FETs, MOSFETs Replacement Considerations
Direct pin-compatible alternatives within the same series include IPB60R950C6 (PG-TO263) and IPP60R950C6 (PG-TO220). Verify electrical parameters and thermal characteristics when substituting between different package types.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
