IPD65R950C6ATMA1

$0.47

Description：MOSFET N-CH 650V 4.5A TO252-3
Series：CoolMOS™ C6
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:5617ae1e389d Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPD65R950C6ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 650V 4.5A TO252-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPD65R950C6ATMA1

Description：MOSFET N-CH 650V 4.5A TO252-3
Series：CoolMOS™ C6
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：950mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id：3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs：15.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：328 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：37W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TO252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IPD65R950C6ATMA1

IPD65R950C6ATMA1

Single FETs, MOSFETs Overview

The IPD65R950C6ATMA1 is a single N-channel CoolMOS C6 power MOSFET manufactured by Infineon Technologies. It features a 650V drain-source voltage rating and a maximum on-resistance of 950mΩ at 10V gate drive. The device supports a continuous drain current of 4.5A and dissipates up to 37W of power. Key electrical characteristics include a gate charge of 15.3nC, an input capacitance of 380pF, and a threshold voltage range of 2.5V to 4.5V. It operates within a temperature range of -55°C to +150°C and utilizes a DPAK-3 (TO-252-3) surface-mount package.

Single FETs, MOSFETs Feature Summary

Utilizes CoolMOS C6 superjunction technology for optimized switching performance
Features low gate charge to facilitate efficient driver requirements
Includes an integrated fast body diode for inductive load applications

Single FETs, MOSFETs Applications

High-frequency switch-mode power supplies
Resonant converter topologies
DC-DC conversion circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix ATMA1 against official datasheets to confirm tape-and-reel packaging and automotive-grade qualification status. Confirm RoHS compliance and material content declarations prior to integration. Cross-reference with manufacturer documentation to ensure the component matches the required thermal and electrical specifications for the target design.

Single FETs, MOSFETs Selection Notes

Select this component when a 650V rating and approximately 950mΩ on-resistance are required in a compact DPAK package. Consider the 15.3nC gate charge for driving capability and the 37W power dissipation limit for thermal management planning. Ensure the application voltage and current levels remain within the specified safe operating area limits defined in the technical data.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon CoolMOS C6 family, designed for high-efficiency power conversion. The TO-252-3 package provides a balance between thermal performance and board space efficiency. The series targets general-purpose high-voltage switching applications requiring reliable operation under standard industrial conditions.