IPF021N13NM6ATMA1

$6.28

Description：TRENCH >=100V
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a03918cf905b Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPF021N13NM6ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH >=100V. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPF021N13NM6ATMA1

Description：TRENCH >=100V
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for IPF021N13NM6ATMA1

IPF021N13NM6ATMA1

Single FETs, MOSFETs Overview

The IPF021N13NM6ATMA1 is an OptiMOS 6 power transistor featuring a 135 V drain-source breakdown voltage and a maximum on-resistance of 2.1 mΩ. It supports a continuous drain current of 250 A at 25°C case temperature and handles pulsed currents up to 1000 A. The device utilizes a PG-TO263-7 package with a thermal resistance from junction to case of 0.4 °C/W. Key dynamic parameters include a total gate charge of 160 nC, output charge of 275 nC, and reverse recovery charge of 168 nC. It operates within a temperature range of -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

Optimized for motor drives and battery-powered applications
Features very low on-resistance and excellent figure of merit
Includes 100% avalanche testing for reliability
RoHS compliant and halogen-free construction

Single FETs, MOSFETs Applications

Motor drives
Battery-powered applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm reel packaging specifications. Ensure the component matches the PG-TO263-7 footprint and pinout configuration required by the target PCB design. Confirm industrial qualification status aligns with JEDEC standards for the intended operating environment.

Single FETs, MOSFETs Selection Notes

Select this component when a 135 V rating is required alongside high current handling capabilities. The low RDS(on) and optimized gate charge make it suitable for efficient switching in power conversion stages. Evaluate the thermal management requirements based on the specified junction-to-case resistance for the expected load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS 6 family of N-channel power transistors designed for industrial applications. It represents a generation of silicon MOSFETs focused on minimizing conduction and switching losses. The technology integrates advanced cell structures to achieve superior performance metrics compared to previous generations.