IPF05N03LA G

Single FETs, MOSFETs Overview

The IPF05N03LA G is an N-channel, logic level OptiMOS®2 power transistor manufactured by Infineon Technologies. It utilizes a P-TO252-3-23 surface-mount package and operates with a drain-source voltage of 25 V. The device supports a continuous drain current of 50 A at 25 °C case temperature and handles pulsed currents up to 350 A. Key electrical parameters include a maximum on-state resistance of 5.1 mΩ at 10 V gate drive and a thermal resistance from junction to case of 1.6 K/W. It features a wide operating temperature range from -55 °C to 175 °C.

Single FETs, MOSFETs Feature Summary

• Logic-level gate architecture enables direct driving from standard logic interfaces.
• Optimized figure of merit (FOM) combining low gate charge and on-resistance for high-frequency efficiency.
• Superior thermal performance with a low junction-to-case thermal resistance rating.
• Qualified according to JEDEC standards for target automotive and industrial applications.

Single FETs, MOSFETs Applications

• High-frequency DC/DC converters
• Synchronous rectification in power supplies
• Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code Q67042-S against the required PG-TO252-3-23 package variant during procurement. Confirm that the component meets RoHS compliance and Pb-free lead plating requirements for your assembly process. Ensure the design accounts for the specified thermal resistance limits to maintain safe operating temperatures under load conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage, high-current N-channel MOSFET is required for surface-mount designs. The logic-level gate threshold simplifies driver circuitry compared to standard threshold devices. Consider the 5.1 mΩ maximum on-resistance for conduction loss calculations and verify that the PCB footprint matches the P-TO252-3-23 outline dimensions provided in the datasheet.

Single FETs, MOSFETs Part Context

This part belongs to the IP(D,F,S,U)05N03LA G family of OptiMOS®2 transistors. The 'F' suffix specifically denotes the P-TO252-3-23 surface-mount package configuration. Other variants in the series include IPD05N03LA (P-TO252-3-11), IPS05N03LA (P-TO251-3-11), and IPU05N03LA (P-TO251-3-21). All share identical electrical characteristics but differ in physical packaging.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible replacements within the same family include IPD05N03LA G, IPS05N03LA G, and IPU05N03LA G, provided the mechanical footprint matches the specific application board layout.

Single FETs, MOSFETs FAQ

What is the maximum avalanche energy rating for single pulses?

The single pulse avalanche energy (EAS) is rated at 300 mJ when the drain current is 45 A and the gate-source resistance is 25 Ω.

How does the reverse diode perform in terms of forward voltage?

The integrated reverse diode exhibits a forward voltage (VSD) of typically 0.91 V and a maximum of 1.2 V at 25 °C with a forward current of 50 A.