IPG20N04S4L11AATMA1

FET, MOSFET Arrays Overview

The IPG20N04S4L11AATMA1 is a dual N-channel power MOSFET from Infineon's OptiMOS-T2 series, housed in a PG-TDSON-8 package. It features a 40V drain-source voltage rating and a continuous drain current of 20A at 25°C. The device exhibits a maximum on-resistance of 11mΩ at VGS=10V and 16mΩ at VGS=4.5V. Key electrical parameters include a gate charge of 26nC (typical) and 30nC (maximum), with a threshold voltage range of 1.2V to 2.2V. It supports an operating temperature range from -55°C to +175°C and carries AEC-Q101 automotive qualification.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrated within a compact surface-mount package for space-constrained designs.
• Optimized low on-resistance characteristics utilizing advanced OptiMOS-T2 silicon technology.
• Automotive-grade reliability certified under the AEC-Q101 standard for harsh environment operation.
• Enhanced thermal performance enabled by the exposed pad design of the PG-TDSON-8 housing.

FET, MOSFET Arrays Applications

• Automotive DC-DC converter circuits
• On-board charging systems
• Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify the complete part number against official Infineon documentation to ensure accuracy, as suffixes define specific tape-and-reel packaging or testing variations. Confirm that the component meets the required AEC-Q101 standards for your specific application environment. Check the current lifecycle status, as availability may vary based on production schedules and regional manufacturing sites.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required within a limited footprint. The 40V rating suits low-voltage automotive systems. Evaluate the 11mΩ on-resistance against your conduction loss requirements. Ensure the driving circuit can handle the specified gate charge levels for efficient switching. Verify thermal management capabilities align with the package's heat dissipation limits.

FET, MOSFET Arrays Part Context

This device belongs to the OptiMOS-T2 family, designed for high-efficiency power switching. It integrates two independent N-channel MOSFETs into a single leadless package. The technology focuses on minimizing conduction losses while maintaining robust avalanche energy handling. It serves as a specialized solution for automotive electronics requiring high current density and thermal stability.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include IPG20N04S4L-11A and IPG20N04S4L-11ATMA1. These variants share identical electrical specifications and pinout configurations. Verify package compatibility and automotive qualification status before substitution.