IPG20N06S4L26ATMA1

FET, MOSFET Arrays Overview

The IPG20N06S4L-26 is a dual N-channel logic level enhancement mode MOSFET from Infineon's OptiMOS-T2 family. It features a PG-TDSON-8 package with a maximum drain-source voltage of 60 V and continuous drain current of 20 A per channel at 25°C. The device has a maximum on-state resistance of 26 mΩ at VGS=10V and 46 mΩ at VGS=4.5V. It supports an operating temperature range of -55°C to +175°C, includes 100% avalanche testing, and is qualified to AEC-Q101 standards.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration in a compact surface-mount package
• Logic-level gate drive capability for low-voltage control applications
• AEC-Q101 automotive qualification ensuring reliability under harsh conditions
• High thermal performance with 175°C junction temperature rating

FET, MOSFET Arrays Applications

• Automotive power distribution systems
• Motor control circuits
• DC-DC converter topologies
• Load switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to ensure correct packaging and marking. Confirm that the component meets the required automotive quality standards for your specific application environment. Check for any recent datasheet revisions that may impact pinout or electrical characteristics before finalizing procurement specifications.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel solution is required within a small footprint. Consider the 26 mΩ RDS(on) for efficiency requirements at 10V gate drive. Ensure the PCB layout accommodates the thermal dissipation needs given the 33W power rating. Verify that the 60V breakdown voltage provides sufficient margin for the target circuit supply rails.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS-T2 series, designed for high-efficiency power switching. It utilizes Infineon's trench technology to minimize conduction losses while maintaining robust avalanche capabilities. The PG-TDSON-8 package offers improved thermal performance compared to traditional SO-8 packages, making it suitable for dense PCB layouts.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the 60V/20A dual N-channel specification and PG-TDSON-8 package. Verify equivalent RDS(on) values and thermal resistance ratings. Ensure any substitute also holds AEC-Q101 qualification if used in automotive contexts. Pin-to-pin compatibility should be confirmed via respective datasheets.