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IPG20N10S436AATMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 100V 20A 8TDSON. Review the specifications below when checking this part for your BOM.
The IPG20N10S436AATMA1 is a dual N-channel enhancement mode power transistor from the OptiMOS-T2 series. It features a PG-TDSON-8 package with a maximum drain-source voltage of 100 V and a continuous drain current of 20 A per channel at 25 °C. The device has a maximum on-state resistance of 36 mΩ at VGS=10 V and ID=17 A. It supports an operating temperature range from -55 °C to +175 °C, offers 100% avalanche testing, and meets AEC-Q101 automotive qualification standards.
Verify the specific ordering suffix against official Infineon documentation to confirm exact electrical tolerances and packaging specifications. Ensure that the component's thermal characteristics align with the target PCB footprint and cooling area requirements before finalizing procurement orders.
Select this component when designing circuits requiring a 100 V rating with low conduction losses in a small form factor. Consider the 36 mΩ maximum RDS(on) for efficiency calculations and verify that the gate charge parameters fit the driving capabilities of the intended controller IC.
This part belongs to the OptiMOS-T2 family, which utilizes advanced trench technology to optimize the trade-off between switching speed and conduction loss. The PG-TDSON-8 package provides efficient thermal dissipation while maintaining a low profile suitable for space-constrained electronic assemblies.
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout configurations and meets or exceeds the original 100 V breakdown voltage and 20 A current ratings.
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