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IPI45N06S4L08AKSA2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is OPTLMOS N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.
The IPI45N06S4L08AKSA2 is an N-channel enhancement mode power MOSFET from Infineon's OptiMOS-T2 series. It features a maximum drain-source voltage of 60 V and a continuous drain current of 45 A at 25 °C. The device utilizes the PG-TO262-3-1 (I2PAK) package. Key electrical parameters include a maximum on-state resistance of 9.4 mΩ and an avalanche energy rating of 97 mJ. It supports a peak junction temperature of 175 °C and is qualified to AEC-Q101 standards for automotive reliability.
Verify the specific ordering suffix 'KSA2' against official documentation, as standard listings often reference 'IPI45N06S4-09'. Confirm that the component meets the required automotive qualification standards and lead-free specifications for your assembly process. Ensure compatibility with the PG-TO262-3-1 footprint during procurement.
Select this component for high-current applications requiring robust avalanche performance. The 60V rating suits general automotive and industrial DC systems. Compare the 9.4 mΩ Rds(on) against thermal requirements in the I2PAK package. Consider the 175°C operating limit for high-temperature environments.
This part belongs to the OptiMOS-T2 family, designed for cost-effective power switching. It shares characteristics with IPB45N06S4-09 but differs in package type. The I2PAK variant offers through-hole mounting options compared to surface-mount alternatives like the TO-263.
IPB45N06S4-09 (Surface Mount), IPP45N06S4-09 (Through-Hole). Verify pinout and thermal resistance differences before substitution.
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