IPI80N06S3-07

Single FETs, MOSFETs Overview

The IPI80N06S3-07 is an N-channel enhancement mode OptiMOS-T2 power transistor manufactured by Infineon Technologies. It features a PG-TO262-3-1 package and supports a maximum drain-source voltage of 55 V with a continuous drain current of 80 A at 25 °C. The device exhibits a typical on-state resistance of 5.8 mΩ and a maximum thermal resistance from junction to case of 1.1 K/W. It operates within a temperature range of -55 °C to +175 °C, includes avalanche testing compliance, and meets automotive AEC-Q101 qualification standards.

Single FETs, MOSFETs Feature Summary

• Automotive AEC-Q101 qualified for reliability in vehicle applications
• OptiMOS-T2 technology providing low on-state resistance and high efficiency
• 100% avalanche tested for robustness against transient overloads
• Green product compliant with RoHS directives

Single FETs, MOSFETs Applications

• Automotive power switching circuits
• High-current DC-DC converter stages
• Motor control driver interfaces

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package variant (PG-TO262-3-1) against the official datasheet before procurement. Confirm that the component meets the required automotive AEC-Q101 qualification level for your specific application environment. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a single N-channel MOSFET with high current handling capability and automotive-grade reliability is required. The PG-TO262-3-1 package offers through-hole mounting suitable for higher power dissipation scenarios compared to surface-mount alternatives. Consider the 55 V rating and 80 A continuous current limits to ensure adequate headroom for your circuit design requirements.

Single FETs, MOSFETs Part Context

This part belongs to the IPB/IPI/IPP80N06S3-07 family of OptiMOS-T2 power transistors. The IPI variant specifically denotes the PG-TO262-3-1 leaded package configuration. It shares electrical characteristics with the IPB (surface mount) and IPP (through-hole TO-220) versions, differing primarily in physical footprint and thermal interface properties.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include the IPB80N06S3-07 and IPP80N06S3-07, which share identical electrical specifications but utilize different packages (PG-TO263-3-2 and PG-TO220-3-1 respectively). Verify PCB footprint compatibility and thermal mounting constraints when substituting these variants.