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IPP026N10NF2SAKMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH >=100V. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IPP026N10NF2SAKMA1
- Description：TRENCH >=100V
- Series：StrongIRFET™ 2
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：27A (Ta), 184A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：2.6mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：3.8V @ 169µA
- Gate Charge (Qg) (Max) @ Vgs：154 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7300 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：3.8W (Ta), 250W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO220-3
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for IPP026N10NF2SAKMA1
Single FETs, MOSFETs Overview
The IPP026N10NF2SAKMA1 is an N-channel, normal level power MOSFET from the StrongIRFET™ 2 series. It features a PG-TO220-3 package with a drain connected to Pin 2 and the tab. Key electrical parameters include a maximum drain-source voltage (VDS) of 100 V, a maximum on-state resistance (RDS(on),max) of 2.6 mΩ at VGS=10 V, and a continuous drain current (ID) of 184 A at TC=25 °C. The device supports a pulsed drain current of 736 A and has a total gate charge (QG) of 103 nTyp. It is qualified according to JEDEC standards and includes avalanche testing.
Single FETs, MOSFETs Feature Summary
- StrongIRFET™ 2 technology optimized for a wide range of applications
- 100% avalanche tested for enhanced reliability
- Lead-free plating compliant with RoHS and halogen-free per IEC61249-2-21
Single FETs, MOSFETs Applications
- General purpose power switching
- High current DC-DC conversion
- Industrial motor control
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix AKMA1 against official Infineon documentation to confirm packaging details and marking codes. Ensure the component matches the PG-TO220-3 outline dimensions. Confirm that the application environment respects the absolute maximum ratings for junction temperature and thermal resistance.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high current handling in a through-hole package. Evaluate thermal management requirements based on the specified RthJC and RthJA values. Consider the gate charge characteristics when designing drive circuits for optimal switching performance.
Single FETs, MOSFETs Part Context
This part belongs to the StrongIRFET™ 2 family of N-channel power MOSFETs. It utilizes advanced silicon technology to achieve low on-state resistance and high current capability within standard industry packages like the PG-TO220-3.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes such as other StrongIRFET™ 2 variants or compatible N-channel MOSFETs with similar VDS, ID, and RDS(on) specifications. Verify pinout compatibility and thermal characteristics before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
