IPP057N08N3GHKSA1

Single FETs, MOSFETs Overview

The IPP057N08N3 G is an N-channel Power MOSFET from the OptiMOS 3 family, manufactured by Infineon Technologies. It features a maximum drain-source voltage (Vds) of 80 V and a continuous drain current (Id) of 60 A at 25°C. The device exhibits a typical on-state resistance (Rds(on)) of 5.7 mΩ at Vgs = 10 V. Key electrical parameters include a gate charge (Qg) of 52 nC, a threshold voltage (Vgs(th)) ranging from 2.1 V to 3.3 V, and a power dissipation capability of up to 83 W. The component supports junction temperatures up to 175°C and is available in PG-TO263-3, PG-TO262-3, and PG-TO220-3 packages.

Single FETs, MOSFETs Feature Summary

• OptiMOS 3 technology providing low on-state resistance for high efficiency
• Enhanced switching performance with optimized gate charge characteristics
• Robust avalanche energy rating for reliable operation under transient conditions
• Lead-free packaging compliant with RoHS standards

Single FETs, MOSFETs Applications

• High-frequency DC-DC converters
• Synchronous rectification circuits
• Motor control applications
• Power factor correction stages

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the datasheet lists PG-TO263-3, PG-TO262-3, and PG-TO220-3 options for this part number series. Confirm that the ordering suffix matches the desired physical footprint. Ensure the component meets all relevant environmental compliance requirements for the target assembly process.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring an 80 V N-channel MOSFET with low conduction losses. Consider the thermal resistance values provided for each package option when designing heat sinks. Evaluate the gate charge requirements against the driving circuit capabilities to ensure optimal switching speeds without excessive drive current demands.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS 3 portfolio, designed for general-purpose power switching. It serves as a discrete solution for medium-power applications where efficiency and thermal performance are critical. The product line includes variants with different pin configurations to accommodate various board layout constraints.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the same OptiMOS 3 family, such as IPI057N08N3 G or IPB054N08N3 G, ensuring package compatibility and identical electrical ratings before substitution.