IPP120N06S4H1AKSA1

Description：MOSFET N-CH 60V 120A TO220-3
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tube

SKU:5ec2723503ed Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IPP120N06S4H1AKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 120A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPP120N06S4H1AKSA1

Description：MOSFET N-CH 60V 120A TO220-3
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id：4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs：270 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：21900 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：250W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：PG-TO220-3-1
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for IPP120N06S4H1AKSA1

IPP120N06S4H1AKSA1

Single FETs, MOSFETs Overview

The Infineon Technologies IPP120N06S4-H1 is an N-channel enhancement mode OptiMOS-T2 power transistor. It features a PG-TO220-3-1 package with a maximum drain-source voltage of 60 V and a continuous drain current of 120 A at 25°C. The device has a maximum on-state resistance of 2.4 mΩ at VGS=10V and supports a pulsed drain current of 480 A. It operates within a temperature range of -55°C to +175°C, offers a thermal resistance junction-to-case of 0.60 K/W, and includes avalanche testing.

Single FETs, MOSFETs Feature Summary

AEC-Q101 qualified for automotive reliability
OptiMOS-T2 technology for low conduction losses
100% avalanche tested for robustness
Green product compliant with RoHS standards

Single FETs, MOSFETs Applications

Automotive power switching applications
High-efficiency DC-DC converters
Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact package type and marking code. Confirm that the component meets all required automotive qualification standards before integration into safety-critical systems. Ensure proper handling procedures are followed during assembly to maintain device integrity.

Single FETs, MOSFETs Selection Notes

Select this component when a low on-resistance N-channel MOSFET with high current capability is required in a through-hole package. Consider the thermal resistance and operating temperature limits for heat dissipation requirements. Evaluate gate charge characteristics for switching speed needs in the target circuit design.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS-T2 family from Infineon Technologies, designed for efficient power switching. It utilizes advanced trench gate technology to minimize conduction losses while maintaining high reliability. The PG-TO220-3-1 package provides robust mechanical stability and effective thermal management for industrial and automotive environments.