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IPP139N08N3 G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 80V 45A TO220-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IPP139N08N3 G
- Description：MOSFET N-CH 80V 45A TO220-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：13.9mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 33µA
- Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1730 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：79W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO220-3
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for IPP139N08N3 G
Single FETs, MOSFETs Overview
The IPP139N08N3 G is an N-channel Power MOSFET from the OptiMOS 3 family, manufactured by Infineon Technologies. It features a maximum drain-source voltage (Vds) of 80 V and a continuous drain current (Id) of 139 A at 25°C. The device has a typical on-state resistance (Rds(on)) of 3.4 mΩ at Vgs = 10 V. It operates within a junction temperature range of -55°C to +175°C and is available in PG-TO-220-3, PG-TO-262-3, and PG-TO-263-3 packages.
Single FETs, MOSFETs Feature Summary
- Optimized low on-state resistance for high efficiency
- Enhanced avalanche ruggedness capability
- Lead-free plating compliant with RoHS standards
- Designed for surface-mount and through-hole applications
Single FETs, MOSFETs Applications
- DC-DC converters
- Motor control circuits
- Power supply units
Single FETs, MOSFETs Procurement Notes
Verify the specific package variant required, as the base part number corresponds to multiple physical footprints including TO-220-3, TO-262-3, and TO-263-3. Confirm that the ordering suffix matches the desired mechanical form factor. Ensure the component meets all environmental compliance requirements for the intended deployment environment before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when an 80 V rating and high current capacity are required. Compare Rds(on) values against thermal management capabilities to ensure safe operation. Verify gate charge specifications against driver output strength to optimize switching performance. Consider the specific package type needed for the PCB layout constraints.
Single FETs, MOSFETs Part Context
This component belongs to the OptiMOS 3 series of power transistors. It shares architectural similarities with other devices in the lineup but offers distinct electrical characteristics tailored for specific voltage and current levels. The technology focuses on reducing conduction losses while maintaining robust switching behavior.
Single FETs, MOSFETs Replacement Considerations
Check datasheets for alternative parts offering similar Vds and Id ratings. Verify pinout compatibility if substituting directly. Ensure thermal resistance parameters support the existing heat dissipation design.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
