IPP50R299CPHKSA1

Single FETs, MOSFETs Overview

The IPP50R299CPHKSA1 is a single N-channel Power MOSFET from Infineon Technologies, belonging to the CoolMOS CP series. It utilizes silicon technology and features a PG-TO220-3-1 through-hole package. The device is rated for a drain-source voltage (Vds) of 500 V and supports a continuous drain current (Id) of 12 A at 25°C. Key electrical parameters include a maximum on-state resistance (Rds(on)) of 270 mΩ measured at a gate-source voltage of 10 V. The component operates within a junction temperature range of -55°C to +150°C with a maximum power dissipation of 104 W.

Single FETs, MOSFETs Feature Summary

• Utilizes CoolMOS CP superjunction technology for optimized performance in high-voltage switching applications.
• Features an enhanced ruggedness profile designed to withstand avalanche conditions effectively.
• Incorporates low internal capacitances to facilitate fast switching speeds and reduced switching losses.

Single FETs, MOSFETs Applications

• High-frequency switch-mode power supplies
• Industrial motor control systems
• Uninterruptible power supply (UPS) circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix H against official documentation to confirm lead-free plating compliance and RoHS status. Confirm the part lifecycle status as it may be subject to change or obsolescence. Ensure thermal management requirements align with the specified power dissipation limits during operation.

Single FETs, MOSFETs Selection Notes

Select this component when a 500 V rating and low on-resistance are required for efficient power conversion. The TO-220 package suits designs requiring robust thermal conduction via heatsinks. Consider the gate charge specifications for driver compatibility in high-speed switching environments.

Single FETs, MOSFETs Part Context

This part belongs to the CoolMOS CP family, representing a generation of superjunction MOSFETs designed to minimize conduction and switching losses. It serves as a discrete alternative to integrated modules in medium-power applications where individual component placement offers design flexibility.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other Infineon CoolMOS CP variants offering similar voltage and current ratings. Verify pinout compatibility and thermal characteristics before substituting with components from different manufacturers.