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IPP60R180CM8XKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IPP60R180CM8XKSA1. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IPP60R180CM8XKSA1
- Description：IPP60R180CM8XKSA1
- Series：CoolMOS™
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：180mOhm @ 5.6A, 10V
- Vgs(th) (Max) @ Id：4.7V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：743 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：142W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO220-3-1
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for IPP60R180CM8XKSA1
Single FETs, MOSFETs Overview
The IPP60R180CM8XKSA1 is a 600V CoolMOS CM8 N-channel power MOSFET in a PG-TO220-3 package. It features a maximum drain-source voltage of 650V and a typical gate charge of 17nC. The device supports a pulsed drain current of 48A and has a maximum on-state resistance of 180mΩ. Thermal performance includes a junction-to-case resistance of 0.88K/W and a junction-to-ambient resistance of 62K/W.
Single FETs, MOSFETs Feature Summary
- Superjunction technology enabling low switching and conduction losses
- Integrated fast body diode with high commutation ruggedness
- Low ringing tendency for ease of use across PFC and PWM stages
- Advanced die attach technique for simplified thermal management
Single FETs, MOSFETs Applications
- Power supplies and converters
- PFC stages and LLC resonant converters
- High-efficiency switching applications such as server, telecom, EV charging, and UPS systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix to confirm the exact package variant and marking code. Confirm that the application environment remains within the specified operating temperature range of -55°C to 150°C. Ensure proper mounting torque limits are observed during installation to maintain mechanical integrity and thermal contact.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring robust hard and soft switching topologies. The integrated ESD protection and low dv/dt capability simplify design-in processes. Consider the thermal resistance values for heat sink sizing to ensure safe operation under continuous load conditions.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon CoolMOS CM8 series, which succeeds the CoolMOS C7 generation. It utilizes superjunction principles to deliver best-in-class RDS(on) per package. The platform is fully qualified according to JEDEC standards for industrial applications, ensuring reliability in demanding environments.
Single FETs, MOSFETs Replacement Considerations
The IPP60R180CM8 serves as the direct successor to the IPP60R180C7. Verify pinout compatibility and thermal characteristics when transitioning from previous generations to ensure adequate cooling solutions are maintained.
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