IPP60R190E6XKSA1

Single FETs, MOSFETs Overview

The IPP60R190E6XKSA1 is a single N-channel CoolMOS E6 superjunction power MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a PG-TO220-3 through-hole package. The device features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 20.2 A at case temperature. Maximum power dissipation is rated at 151 W under thermal conditions. Key electrical parameters include a maximum on-resistance (Rds(on)) of 190 mΩ at 10 V gate drive, a gate charge (Qg) of 63 nC, and an input capacitance (Ciss) of 1400 pF. The component operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Employs CoolMOS E6 superjunction technology for optimized switching performance.
• Designed for high-efficiency power conversion applications.
• Features robust thermal characteristics suitable for through-hole mounting.

Single FETs, MOSFETs Applications

• High-frequency switch-mode power supplies
• Industrial motor control systems
• Uninterruptible power supply (UPS) units

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix XKSA1 against official Infineon documentation to confirm RoHS compliance and packaging details. Ensure the ordering part number matches the exact datasheet revision required for your design. Cross-reference the PG-TO220-3 footprint with your PCB layout specifications before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when a 600 V rating and low conduction losses are required in a through-hole format. Compare the 190 mΩ on-resistance against system thermal constraints. Evaluate the 63 nC gate charge for driver compatibility. Consider the TO-220-3 package size relative to available board space and heat sinking requirements.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon CoolMOS E6 family, which represents a generation of superjunction MOSFETs designed to bridge performance gaps between traditional planar technologies and newer advanced nodes. The E6 series focuses on balancing high breakdown voltage capabilities with reduced switching losses, targeting efficiency improvements in medium-power industrial and consumer electronics applications.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Generic replacements may differ in gate charge or thermal resistance. Verify that any substitute maintains the 600 V rating and compatible TO-220-3 pinout without requiring circuit redesign.