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IPP80N06S2L09AKSA2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 80A TO220-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IPP80N06S2L09AKSA2
- Description：MOSFET N-CH 55V 80A TO220-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Bulk,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8.5mOhm @ 52A, 10V
- Vgs(th) (Max) @ Id：2V @ 125µA
- Gate Charge (Qg) (Max) @ Vgs：105 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2620 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：190W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO220-3-1
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for IPP80N06S2L09AKSA2
Single FETs, MOSFETs Overview
The IPP80N06S2L09AKSA2 is an N-channel OptiMOS power transistor in a PG-TO220-3-1 package. It features a drain-source voltage of 55 V and a continuous drain current of 80 A at 25°C. The maximum on-state resistance is 8.5 mΩ at VGS=10V, with a gate threshold voltage ranging from 1.2 V to 2.0 V. Power dissipation reaches 190 W at 25°C case temperature. It supports a junction temperature up to 175°C and includes an integrated body diode.
Single FETs, MOSFETs Feature Summary
- Automotive AEC-Q101 qualified for high reliability applications
- Logic level enhancement mode operation
- Ultra-low on-state resistance for efficiency
- 100% avalanche tested
Single FETs, MOSFETs Applications
- Automotive power switching
- DC-DC converters
- Motor control circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code SP0002-18742 against the required PG-TO220-3-1 leaded package variant. Confirm that the component meets automotive qualification standards if used in vehicle systems. Ensure thermal management design accounts for the specified junction-to-case thermal resistance values during operation.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring robust automotive-grade performance with logic-level gate drive compatibility. Consider the 175°C operating temperature limit for high-thermal environments. Evaluate the 8.5 mΩ maximum Rds(on) for conduction loss calculations in high-current scenarios.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS family, designed for low-loss power switching. The 'L' suffix typically denotes Logic Level capability, allowing direct drive from standard logic voltages. It is distinct from surface mount variants like the IPB80N06S2L-09.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include other PG-TO220-3-1 packaged OptiMOS devices with similar 55V/80A ratings, such as the IPP80N06S2L-11AKSA2 or IPP80N06S2-07, provided pinout and electrical parameters match.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
