IPP80R360P7XKSA1

Single FETs, MOSFETs Overview

The IPP80R360P7XKSA1 is an N-channel CoolMOS P7 power MOSFET manufactured by Infineon Technologies. It features a maximum drain-source voltage (VDS) of 800 V and a typical on-resistance (RDS(on)) of 360 mΩ at 25°C. The device supports a continuous drain current (ID) of 13 A and a pulsed drain current (IDpuls) of 34 A. Key electrical parameters include a gate charge (Qg) of 30 nC, a threshold voltage (VGS(th)) range of 2.5 V to 3.5 V, and a total power dissipation (Ptot) of 30 W. Thermal characteristics specify a junction-to-case thermal resistance (RthJC) of 4.2 K/W and a junction-to-ambient thermal resistance (RthJA) of 80 K/W. The component operates within a temperature range of -55°C to +150°C and utilizes a TO-220 FullPAK package.

Single FETs, MOSFETs Feature Summary

• Utilizes CoolMOS P7 superjunction technology for optimized high-voltage performance.
• Provides low switching losses and excellent thermal behavior for efficient power conversion.
• Designed for cost-sensitive applications requiring high efficiency and power density.

Single FETs, MOSFETs Applications

• Flyback topologies in chargers and adapters
• Lighting applications
• Television power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix XKSA1 against official Infineon documentation to confirm exact packaging and reel specifications. Ensure compatibility with TO-220 FullPAK mounting requirements. Cross-reference datasheet revisions to confirm parameter consistency. Confirm RoHS compliance status through official material content sheets. Validate that the component meets the intended thermal management design constraints.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 800 V blocking capability with moderate current handling. The 360 mΩ on-resistance offers a balance between conduction loss and cost. Consider the TO-220 FullPAK package for through-hole assembly where space permits. Evaluate thermal resistance values against the system's heat sinking capabilities. Compare gate charge requirements with available driver strength for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the CoolMOS P7 family, which represents an optimized platform for consumer market applications. The series focuses on providing fast switching superjunction benefits combined with an excellent price-performance ratio. It targets cost-sensitive segments such as chargers, adapters, and lighting, enabling slim designs through high efficiency and power density.

Single FETs, MOSFETs Replacement Considerations

Official substitutes include IPD80R360P7ATMA1 (SMD DPAK) and IPA80R360P7 (THT TO-220). Verify pinout compatibility and thermal interface differences when replacing surface mount or different through-hole variants. Check if the application requires specific avalanche ruggedness ratings documented in separate application notes.