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IPS80R1K2P7AKMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 800V 4.5A TO251-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IPS80R1K2P7AKMA1
- Description：MOSFET N-CH 800V 4.5A TO251-3
- Series：CoolMOS™ P7
- Mfr：Infineon Technologies
- Package：Bulk,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.2Ohm @ 1.7A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs：11 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：300 pF @ 500 V
- FET Feature：-
- Power Dissipation (Max)：37W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO251-3-342
- Package / Case：TO-251-3 Stub Leads, IPAK
Single FETs, MOSFETs datasheet and documents for IPS80R1K2P7AKMA1
Single FETs, MOSFETs Overview
The IPS80R1K2P7AKMA1 is an N-channel enhancement mode MOSFET from Infineon Technologies' CoolMOS P7 series. It features a silicon technology with a drain-source voltage rating of 800 V and a continuous drain current of 6 A at 25°C. The device offers a maximum on-resistance of 1.2 Ohms, ensuring efficient power handling. It operates within a temperature range of -55°C to +150°C and utilizes a TO-251 (D2PAK) through-hole package for robust thermal management.
Single FETs, MOSFETs Feature Summary
- Utilizes CoolMOS P7 superjunction technology for optimized efficiency and low conduction losses.
- Designed for high-voltage applications with an 800 V breakdown voltage capability.
- Features a rugged TO-251 package suitable for through-hole mounting and heat dissipation.
Single FETs, MOSFETs Applications
- Industrial switch-mode power supplies
- Server and data center power systems
- Solar energy inverters
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix AKMA1 against official datasheets to confirm the TO-251 package and through-hole configuration. Ensure compatibility with existing PCB footprints and thermal design requirements before integration. Confirm RoHS compliance status via the manufacturer's latest documentation.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high voltage isolation and moderate current handling in through-hole assemblies. Compare the 1.2 Ohm on-resistance against system loss budgets. Consider the thermal resistance characteristics of the TO-251 package for adequate heatsinking solutions in enclosed environments.
Single FETs, MOSFETs Part Context
This part belongs to the CoolMOS P7 family, representing advanced superjunction MOSFETs. It complements other variants like IPN80R1K2P7ATMA1 but differs in packaging, offering a through-hole solution instead of surface mount. The series targets high-efficiency power conversion across industrial and consumer electronics.
Single FETs, MOSFETs FAQ
What is the maximum gate-source voltage for the IPS80R1K2P7AKMA1?
The absolute maximum gate-source voltage rating is typically ±20 V for this CoolMOS P7 variant.
Is this device suitable for automotive applications?
Standard CoolMOS P7 parts are generally designed for industrial and consumer markets; verify specific AEC-Q101 qualification status in the detailed datasheet.
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