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IPT129N20NM6ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH >=100V. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IPT129N20NM6ATMA1
- Description：TRENCH >=100V
- Series：OptiMOS™ 6
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：11A (Ta), 87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V, 15V
- Rds On (Max) @ Id, Vgs：12mOhm @ 65A, 15V
- Vgs(th) (Max) @ Id：4.5V @ 129µA
- Gate Charge (Qg) (Max) @ Vgs：56 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3800 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：3.8W (Ta), 234W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-HSOF-8-1
- Package / Case：8-PowerSFN
Single FETs, MOSFETs datasheet and documents for IPT129N20NM6ATMA1
Single FETs, MOSFETs Overview
The IPT129N20NM6ATMA1 is an N-channel Power MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features a 200 V drain-source voltage (Vds) and a continuous drain current (Id) of 87 A at case temperature. The device exhibits a maximum on-state resistance (Rds(on)) of 12.9 mΩ at 10 V gate drive. It operates within a junction temperature range of -55 °C to +175 °C and offers a power dissipation capability of 234 W. The component is housed in a PG-HSOF-8 surface-mount package.
Single FETs, MOSFETs Feature Summary
- OptiMOS technology provides low on-state resistance for improved efficiency
- Enhanced thermal performance via source-down package design
- Robust switching characteristics suitable for high-frequency applications
Single FETs, MOSFETs Applications
- Motor drives
- Solar inverters
- Battery management systems
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including the ATMA1 suffix to ensure correct tape-and-reel packaging configuration. Confirm that the specific revision matches the required datasheet version for accurate electrical parameter alignment. Cross-reference the ordering code with official manufacturer catalogs to avoid substitution errors during procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring 200 V blocking capability with moderate current handling. The PG-HSOF-8 package facilitates surface-mount assembly while providing adequate thermal dissipation. Ensure gate drive voltages align with the specified Rds(on) test conditions to achieve optimal conduction losses.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS family of silicon MOSFETs designed for power conversion efficiency. The IPT series specifically targets industrial and automotive environments where reliability under thermal stress is critical. The numbering convention indicates the voltage class and on-resistance tier within the product portfolio.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include IPT129N20NM6ATMA1 variants with identical pinouts and electrical specifications. Verify package compatibility and thermal resistance values when considering alternative manufacturers.
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