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IQD005N04NM6SCATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is OPTIMOS POWER MOSFETS 25 V - 150. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IQD005N04NM6SCATMA1
- Description：OPTIMOS POWER MOSFETS 25 V - 150
- Series：OptiMOS™ 6
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：57A (Ta), 597A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：0.49mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1.449mA
- Gate Charge (Qg) (Max) @ Vgs：163 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：12000 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta), 333W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-WHSON-8-U02
- Package / Case：8-PowerWDFN
Single FETs, MOSFETs datasheet and documents for IQD005N04NM6SCATMA1
Single FETs, MOSFETs Overview
The IQD005N04NM6SC is an N-channel OptiMOS™ 6 power transistor with a 40 V drain-source breakdown voltage. It features a maximum on-resistance of 0.49 mΩ and supports a continuous drain current of 597 A at 25 °C. The device utilizes a PG-WHSON-8 package designed for double-side cooling, offering thermal resistances of 0.45 °C/W (junction-to-case bottom) and 0.56 °C/W (junction-to-case top). Total gate charge is typically 130 nC.
Single FETs, MOSFETs Feature Summary
- Optimized design for double-side cooling to enhance thermal performance
- Superior thermal resistance characteristics via the PG-WHSON-8 package
- Very low on-resistance for efficient power switching
- Fully qualified according to JEDEC standards for industrial applications
Single FETs, MOSFETs Applications
- Industrial power conversion systems
- High-efficiency DC-DC converters
- Power management modules requiring robust thermal dissipation
Single FETs, MOSFETs Procurement Notes
Verify that the specific ordering code matches the required package variant. Confirm compliance with RoHS and halogen-free requirements based on IEC61249-2-21 standards. Ensure the application environment aligns with the specified industrial qualification limits. Review absolute maximum ratings carefully to prevent exceeding avalanche energy or pulsed current thresholds during operation.
Single FETs, MOSFETs Selection Notes
Select this component when high current handling and low conduction losses are critical. The double-side cooling capability makes it suitable for dense PCB layouts where heat dissipation from both sides is necessary. Evaluate the total gate charge against driver capabilities to ensure optimal switching speeds without excessive drive current demands.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS™ 6 family, which targets 40 V applications. It represents an advancement in silicon technology aimed at reducing system costs through improved figures of merit. The PG-WHSON-8 package provides a compact footprint while maximizing thermal contact area compared to traditional surface-mount packages.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes within the same series include IQD005N04NM6CG, which shares similar electrical parameters but utilizes a different PQFN source-down package configuration.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
