Single FETs, MOSFETs IQE022N06LM5ATMA1 product image

IQE022N06LM5ATMA1

$2.32
  • Description:TRENCH 40<-<100V
  • Series:OptiMOS™ 5
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:70ecfb50f764 Category: Brand:

  
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IQE022N06LM5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH 40. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IQE022N06LM5ATMA1

  • Description:TRENCH 40<-<100V
  • Series:OptiMOS™ 5
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:24A (Ta), 151A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:2.2mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.3V @ 48µA
  • Gate Charge (Qg) (Max) @ Vgs:53 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:4420 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta), 100W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TSON-8-5
  • Package / Case:8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for IQE022N06LM5ATMA1

IQE022N06LM5ATMA1

Single FETs, MOSFETs Overview

The IQE022N06LM5ATMA1 is an N-channel OptiMOS™ 5 power transistor with a 60 V drain-source breakdown voltage. It features a maximum on-resistance of 2.2 mΩ at 10 V gate drive and 2.9 mΩ at 4.5 V. The device supports a continuous drain current of 151 A at 25 °C case temperature and handles pulsed currents up to 604 A. Total gate charge is 53 nC at 10 V, with output charge at 45 nC. Thermal resistance from junction to case is 0.9 °C/W typical. Operating temperature ranges from -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

  • Optimized for high-performance synchronous rectification in switch-mode power supplies
  • Logic-level operation enabling efficient drive at low gate voltages
  • Superior thermal resistance characteristics for effective heat dissipation
  • 100% avalanche tested for enhanced ruggedness and reliability

Single FETs, MOSFETs Applications

  • Synchronous rectification in DC-DC converters
  • High-efficiency switch-mode power supply designs
  • Industrial power conversion systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm packaging details and tape-and-reel specifications. Ensure component authenticity through authorized distribution channels. Confirm RoHS compliance and halogen-free status requirements match project specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses are critical in 60 V applications. The logic-level threshold allows compatibility with standard 3.3 V or 5 V control signals. Evaluate thermal management needs based on the specified junction-to-case resistance. Consider the package size constraints relative to available PCB copper area for optimal heat spreading.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™ 5 family of silicon power MOSFETs designed by Infineon Technologies. The series focuses on minimizing on-resistance while maintaining robust thermal performance in compact surface-mount packages. The PG-TSON-8 package provides a balance between electrical performance and board space efficiency for modern power electronics.

Single FETs, MOSFETs Replacement Considerations

Direct replacements within the same family include IQE022N06LM5CGSCATMA1. Verify pinout compatibility and thermal characteristics when substituting.

IQE022N06LM5ATMA1IQE022N06LM5ATMA1
$2.32
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