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IQE022N06LM5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH 40. Review the specifications below when checking this part for your BOM.
The IQE022N06LM5ATMA1 is an N-channel OptiMOS™ 5 power transistor with a 60 V drain-source breakdown voltage. It features a maximum on-resistance of 2.2 mΩ at 10 V gate drive and 2.9 mΩ at 4.5 V. The device supports a continuous drain current of 151 A at 25 °C case temperature and handles pulsed currents up to 604 A. Total gate charge is 53 nC at 10 V, with output charge at 45 nC. Thermal resistance from junction to case is 0.9 °C/W typical. Operating temperature ranges from -55 °C to +175 °C.
Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm packaging details and tape-and-reel specifications. Ensure component authenticity through authorized distribution channels. Confirm RoHS compliance and halogen-free status requirements match project specifications before finalizing procurement orders.
Select this component when low conduction losses are critical in 60 V applications. The logic-level threshold allows compatibility with standard 3.3 V or 5 V control signals. Evaluate thermal management needs based on the specified junction-to-case resistance. Consider the package size constraints relative to available PCB copper area for optimal heat spreading.
This part belongs to the OptiMOS™ 5 family of silicon power MOSFETs designed by Infineon Technologies. The series focuses on minimizing on-resistance while maintaining robust thermal performance in compact surface-mount packages. The PG-TSON-8 package provides a balance between electrical performance and board space efficiency for modern power electronics.
Direct replacements within the same family include IQE022N06LM5CGSCATMA1. Verify pinout compatibility and thermal characteristics when substituting.
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