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IQE030N06NM5CGSCATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is OPTIMOS LOWVOLTAGE POWER MOSFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IQE030N06NM5CGSCATMA1
- Description：OPTIMOS LOWVOLTAGE POWER MOSFET
- Series：OptiMOS™ 5
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：21A (Ta), 132A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3.3V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs：49 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3800 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 100W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-WHTFN-9-1
- Package / Case：9-PowerWDFN
Single FETs, MOSFETs datasheet and documents for IQE030N06NM5CGSCATMA1
Single FETs, MOSFETs Overview
The IQE030N06NM5CGSCATMA1 is an OptiMOS™ 5 N-channel power MOSFET with a 60 V drain-source breakdown voltage. It features a maximum on-state resistance of 3.0 mΩ at VGS=10V and ID=20A, supporting a continuous drain current of 132 A at TC=25°C. The device utilizes a PG-WHTFN-9 surface-mount package. Key electrical parameters include a gate charge of 39 nC (typical) and an output charge of 42 nC. It operates within a junction temperature range of -55°C to +175°C.
Single FETs, MOSFETs Feature Summary
- Optimized for synchronous rectification applications
- Features superior thermal resistance with dual-side cooling capability
- Includes internal body diode with specified reverse recovery characteristics
- Fully qualified according to JEDEC standards for industrial applications
Single FETs, MOSFETs Applications
- Synchronous rectification in DC/DC converters
- Industrial motor control systems
- Power supply modules requiring high efficiency
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix ATMA1 against the manufacturer's official documentation to confirm packaging details such as reel size or tape specifications. Ensure that the component meets all relevant environmental compliance requirements, including RoHS and halogen-free standards, prior to integration into final assemblies.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring low conduction losses and robust thermal performance in compact footprints. Consider the 60 V rating and 3 mΩ RDS(on) for efficient power handling. Evaluate the thermal resistance values relative to the PCB copper area and airflow conditions to ensure safe operating temperatures under load.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon OptiMOS™ 5 family, designed for low-voltage power switching. It employs advanced silicon technology to achieve high current density in small packages. The PG-WHTFN-9 package provides enhanced heat dissipation compared to standard surface-mount options, suitable for demanding industrial environments.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the same OptiMOS™ 5 series with compatible pinouts and electrical ratings. Verify that any replacement maintains the required RDS(on), Qg, and thermal characteristics to ensure circuit performance parity.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
