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IRF1404ZPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 180A TO220AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRF1404ZPBF
- Description：MOSFET N-CH 40V 180A TO220AB
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.7mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：150 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4340 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：200W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for IRF1404ZPBF
Single FETs, MOSFETs Overview
The IRF1404ZPBF is a single N-channel enhancement mode power MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a TO-220-3 through-hole package. The device features a drain-source breakdown voltage of 40 V and a continuous drain current rating of 180 A at 25°C. Its maximum on-resistance is specified as 3.7 mΩ, with a typical gate charge of 100 nC at 10 V. The component supports a junction temperature up to 175°C and offers a wide safe operating area.
Single FETs, MOSFETs Feature Summary
- Single N-channel HEXFET architecture for high-efficiency switching
- Enhanced Safe Operating Area (SOA) performance
- Lead-free packaging compliant with RoHS standards
Single FETs, MOSFETs Applications
- DC-DC converters
- Synchronous rectification circuits
- Motor control applications
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'Z' indicates lead-free compliance and environmental status. Confirm the package type matches the design requirements. Check the lifecycle status as it may be subject to obsolescence notices. Ensure the manufacturer source is Infineon Technologies.
Single FETs, MOSFETs Selection Notes
Select this component for low-voltage, high-current applications requiring robust thermal performance. Compare the 3.7 mΩ on-resistance against system loss requirements. Verify that the 40 V voltage rating provides sufficient margin for the target circuit. Consider the TO-220-3 package for through-hole mounting constraints.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon HEXFET family of power MOSFETs. It shares core electrical characteristics with variants like the IRF1404 but differs in packaging or environmental specifications. The Z suffix typically denotes lead-free construction within the product line.
Single FETs, MOSFETs Replacement Considerations
The IRF1404 serves as a primary functional equivalent. Verify pinout compatibility and thermal resistance values before substitution.
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