IRF1405PBF

$2.18

Description：MOSFET N-CH 55V 169A TO220AB
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:0290d5c56815 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRF1405PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 169A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF1405PBF

Description：MOSFET N-CH 55V 169A TO220AB
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：169A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：5.3mOhm @ 101A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：260 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5480 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：330W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for IRF1405PBF

IRF1405PBF

Single FETs, MOSFETs Overview

The IRF1405PBF is a single N-channel power MOSFET manufactured by Infineon Technologies in a TO-220 package. It features a drain-source breakdown voltage of 55 V and a maximum continuous drain current of 169 A at 25°C case temperature. The device exhibits an ultra-low on-resistance of 5.3 mΩ at VGS = 10V. Key electrical parameters include a gate threshold voltage range of 2.0 V to 4.0 V, total gate charge of 170 nC (typical), and a maximum power dissipation of 330 W. It supports a junction temperature up to 175°C and includes fully avalanche-rated capabilities.

Single FETs, MOSFETs Feature Summary

Advanced process technology achieving extremely low on-resistance per silicon area
Fast switching speed combined with improved repetitive avalanche rating
Capable of operating at junction temperatures up to 175°C
Features dynamic dv/dt rating for robust performance

Single FETs, MOSFETs Applications

Industrial motor drive

Single FETs, MOSFETs Procurement Notes

Verify the component status as this product may not be developed for series supply by Infineon. Confirm technical specifications against the latest official datasheet before integration. Ensure compatibility with intended thermal management solutions given the high current ratings. Validate that the application does not involve scenarios where failure could result in personal injury, adhering to standard safety disclaimers.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling and low conduction losses within a 55 V system. Consider the TO-220 package constraints for through-hole mounting and thermal dissipation requirements. Evaluate the need for avalanche ruggedness if inductive loads are present. Compare gate charge characteristics against available driver capabilities to ensure efficient switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET Power MOSFET family utilizing Stripe Planar design. It represents a discrete semiconductor device designed for power switching applications. The specific model integrates advanced processing techniques to optimize efficiency and reliability compared to previous generations.