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IRF640NLPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 200V 18A TO262. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRF640NLPBF
- Description：MOSFET N-CH 200V 18A TO262
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：150mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：67 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1160 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：150W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-262
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Single FETs, MOSFETs datasheet and documents for IRF640NLPBF
Single FETs, MOSFETs Overview
The IRF640NLPBF is a lead-free, N-channel enhancement mode MOSFET from the HEXFET series. It features a TO-262 (D2PAK) surface-mount package with three pins. The device supports a maximum drain-source voltage of 200 V and a continuous drain current of 18 A at 25°C case temperature. Its maximum on-resistance is 0.15 Ω at a gate-to-source voltage of 10 V. The component operates within a junction temperature range of -55°C to +175°C and has a power dissipation rating of 150 W.
Single FETs, MOSFETs Feature Summary
- Advanced processing technology for low on-resistance per silicon area
- Fast switching speed capability
- Fully avalanche rated design
- Ease of paralleling
Single FETs, MOSFETs Applications
- Commercial-industrial applications
- High current applications
- Power supply circuits
Single FETs, MOSFETs Procurement Notes
Verify that the ordering suffix 'LPBF' corresponds to the specified lead-free status and TO-262 package configuration as documented in the official datasheet. Confirm that the manufacturer designation aligns with Infineon Technologies or International Rectifier specifications. Ensure compliance with RoHS standards and check for any specific automotive qualification requirements if applicable to the target system environment.
Single FETs, MOSFETs Selection Notes
Select this component when a surface-mount solution is required for high-current switching applications. The TO-262 package provides lower thermal resistance compared to standard through-hole options while maintaining robust electrical characteristics. Consider the 200V breakdown voltage and 18A current handling capabilities against the specific load requirements of the circuit design.
Single FETs, MOSFETs Part Context
This part belongs to the Fifth Generation HEXFET Power MOSFET lineup. These devices utilize advanced processing techniques to achieve extremely low on-resistance. The product line includes various package options such as TO-220AB and D2Pak, catering to different mounting and thermal management needs in commercial and industrial electronics.
Single FETs, MOSFETs Replacement Considerations
Consult the official datasheet for equivalent part numbers within the same HEXFET family. Verify pinout compatibility and thermal performance metrics before substituting.
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