IRF6618TR1PBF

Description：MOSFET N-CH 30V 30A DIRECTFET
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:163d9ebdd24c Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRF6618TR1PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 30A DIRECTFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF6618TR1PBF

Description：MOSFET N-CH 30V 30A DIRECTFET
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：30A (Ta), 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.35V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：65 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5640 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.8W (Ta), 89W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DIRECTFET™ MT
Package / Case：DirectFET™ Isometric MT

Single FETs, MOSFETs datasheet and documents for IRF6618TR1PBF

IRF6618TR1PBF

Single FETs, MOSFETs Overview

The IRF6618TR1PBF is a surface-mount N-channel HEXFET power MOSFET utilizing DirectFET MX packaging. It features a drain-to-source voltage of 30V and a maximum on-resistance of 2.2mΩ at VGS=10V. Continuous drain current reaches 30A at TC=25°C, with a total gate charge of 43nC typical. The component supports dual-sided cooling, achieving a junction-to-case thermal resistance of 1.4°C/W.

Single FETs, MOSFETs Feature Summary

Combines advanced silicon technology with DirectFET packaging for low profile and footprint compatibility
Optimized for synchronous buck converter applications to minimize conduction and switching losses
Enables dual-sided cooling to maximize thermal transfer efficiency

Single FETs, MOSFETs Applications

CPU core DC-DC converters
High frequency high efficiency DC-DC converters
Synchronous buck converter SyncFET sockets

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TR1 indicates a reel quantity of 1000 parts on a 7-inch reel, distinct from standard reels. Confirm package designation MT corresponds to the Medium Size Can T-Design. Ensure compliance with lead-free qualification up to 260°C reflow temperatures during assembly.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring ultra-low package inductance and minimal profile under 0.7mm. Evaluate thermal requirements against the 1.4°C/W junction-to-case resistance when implementing dual-sided cooling strategies. Consider the 43nC gate charge for driver capability matching in high-frequency operation.

Single FETs, MOSFETs Part Context

This device belongs to the DirectFET family, integrating HEXFET silicon with specialized packaging. It replaces traditional SO-8 footprints while offering superior thermal performance. The product line targets high-current loads such as microprocessors, balancing industry-leading on-state resistance with minimized gate charge.