IRF6712STRPBF

Single FETs, MOSFETs Overview

The IRF6712STRPBF is a single N-channel power MOSFET utilizing HEXFET silicon technology and DirectFET packaging. It features a maximum drain-to-source voltage of 25 V and a continuous drain current of 68 A at 25°C ambient temperature. The device achieves an on-resistance of 3.8 mΩ at 10 V gate drive and 6.7 mΩ at 4.5 V. Total gate charge is typically 12 nC, with a gate-drain charge of 4.0 nC. Thermal resistance from junction to case is 3.5 K/W, supporting dual-sided cooling for high-efficiency DC-DC converter applications.

Single FETs, MOSFETs Feature Summary

• Combines advanced HEXFET silicon technology with DirectFET packaging for ultra-low package inductance and minimal footprint.
• Optimized for synchronous buck converters operating from 12-volt bus systems, balancing low conduction and switching losses.
• Supports dual-sided cooling to maximize thermal transfer and improve system efficiency.
• Compatible with standard surface mount assembly techniques including vapor phase, infrared, and convection soldering.

Single FETs, MOSFETs Applications

• High-frequency CPU core DC-DC converters
• Synchronous rectification in point-of-load modules
• 12-volt bus converter designs

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix STRPBF corresponds to the tape and reel quantity required for your production line. Confirm that the component meets RoHS compliance and halogen-free standards as specified in the datasheet. Ensure that the manufacturing methods strictly follow application note AN-1035 regarding stencil design and substrate layouts to maintain thermal performance and reliability during assembly.

Single FETs, MOSFETs Selection Notes

Select this component when designing low-profile power stages requiring high current density within a MICRO-8 footprint. The device is suitable for applications demanding optimized parameters for both synchronous FET and control FET roles. Consider its low gate charge and on-resistance characteristics for systems prioritizing high switching frequencies and reduced total power loss.

Single FETs, MOSFETs Part Context

This part belongs to the StrongIRFET family, which integrates leading-edge MOSFET technology with innovative packages like DirectFET. These components are engineered to deliver best-in-class performance, combining ultra-low on-resistance with high efficiency and power density. The DirectFET package specifically enables dual-side cooling capabilities not available in traditional industry-standard packages.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools or manufacturer documentation for verified substitute part numbers. Do not assume functional equivalence based solely on similar electrical ratings without verifying package compatibility and thermal characteristics.

Single FETs, MOSFETs FAQ

What is the maximum allowable gate-to-source voltage?

The absolute maximum rating for gate-to-source voltage is ±20 V.

How does the DirectFET package enhance thermal performance?

The DirectFET package allows for dual-sided cooling, which maximizes thermal transfer and improves thermal resistance compared to previous designs.