IRF6802SDTR1PBF

FET, MOSFET Arrays Overview

The IRF6802SDTR1PBF is a dual N-channel MOSFET from Infineon Technologies, housed in the DirectFET SA micro-template package. It features a maximum drain-source voltage (VDS) of 25 V and a gate-source voltage (VGS) limit of 16 V. The device supports a maximum continuous drain current (ID) of 57 A at 25°C. Key electrical parameters include a typical total gate charge (QG) of 8.8 nC at 4.5 V and a typical gate-drain charge (Qgd) of 3.1 nC. On-resistance (RDS(on)) is specified at a maximum of 4.2 mΩ at 10 V and 5.9 mΩ at 4.5 V. The component has a maximum junction temperature (Tj) of 150 °C and a thermal resistance junction-to-ambient (RthJA) of 72 K/W.

FET, MOSFET Arrays Feature Summary

• Dual-sided cooling compatible design for enhanced thermal management
• Optimized for high-frequency switching applications with low gate charge
• Low package inductance to support fast transient response

FET, MOSFET Arrays Applications

• CPU core DC-DC converters
• Synchronous buck converter control FET sockets
• Switching mode power supplies (SMPS)

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'TR1' against official Infineon documentation to confirm reel specifications or tape-and-reel packaging details, as standard datasheets may list 'SD' or 'SDPBF'. Ensure the ordering part number matches the exact moisture sensitivity level and RoHS compliance status required for your assembly process. Cross-reference the manufacturer's latest release notes for any potential obsolescence notices or alternate recommended replacements.

FET, MOSFET Arrays Selection Notes

Select this component for low-voltage, high-current synchronous rectification where minimal conduction loss is critical. The DualFET configuration reduces footprint compared to discrete solutions. Evaluate the 4.2 mΩ RDS(on) at 10 V drive against your controller's output capability. Consider the 72 K/W thermal resistance for natural convection cooling requirements in dense PCB layouts.

FET, MOSFET Arrays Part Context

This part belongs to the IRF6802 family of dual N-channel MOSFETs designed for point-of-load applications. It utilizes Infineon's DirectFET technology, which integrates two chips in a single package to minimize parasitic inductance and improve thermal performance. The series is targeted at powering high-performance processors and digital logic circuits requiring efficient voltage regulation.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon substitution guides for verified equivalents. Generic cross-references are not supported without explicit manufacturer confirmation.