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IRF7105PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N/P-CH 25V 3.5A/2.3A 8SO. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF7105PBF
- Description：MOSFET N/P-CH 25V 3.5A/2.3A 8SO
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：25V
- Current - Continuous Drain (Id) @ 25°C：3.5A, 2.3A
- Rds On (Max) @ Id, Vgs：100mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：330pF @ 15V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF7105PBF
FET, MOSFET Arrays Overview
The IRF7105PBF is a dual-channel, N/P-channel enhancement-mode MOSFET manufactured by Infineon Technologies. It features a maximum drain-source voltage of 25 V and continuous drain currents of 3.5 A for the N-channel and 2.3 A for the P-channel. The device utilizes an SOIC-8 surface-mount package with a maximum power dissipation of 2 W. Key electrical parameters include a maximum on-resistance of 100 mΩ for the N-channel and 250 mΩ for the P-channel at specified gate voltages. The component operates within a temperature range of -55 °C to +150 °C.
FET, MOSFET Arrays Feature Summary
- Dual-channel configuration integrating both N-channel and P-channel enhancement-mode MOSFETs in a single package.
- Logic-level gate drive capability with a threshold voltage range of 1 V to 3 V.
- Surface-mount construction in an SOIC-8 package designed for automated assembly.
FET, MOSFET Arrays Applications
- Low-side and high-side switching circuits
- DC-DC converter output stages
- Motor control interfaces
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix against official Infineon documentation to confirm lead-free status and tape-and-reel specifications. Ensure the ordering part number matches the required packaging format. Confirm RoHS compliance details directly from the manufacturer's datasheet before procurement.
FET, MOSFET Arrays Selection Notes
Select this component for applications requiring complementary N/P-channel switching in a compact form factor. Verify that the 25 V breakdown voltage meets circuit requirements. Check thermal management needs as the SOIC-8 package has limited heat dissipation capabilities compared to larger packages.
FET, MOSFET Arrays Part Context
This component belongs to Infineon's HEXFET power MOSFET family, known for advanced processing techniques that achieve low on-resistance per silicon area. The dual-channel design simplifies board layout for bridge and half-bridge configurations commonly found in power management ICs.
FET, MOSFET Arrays Replacement Considerations
Consult official cross-reference tools for verified substitutes. Ensure any replacement maintains the same voltage rating, current capacity, and pinout compatibility.
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