IRF720PBF-BE3

Single FETs, MOSFETs Overview

The IRF720PBF-BE3 is a Vishay Siliconix third-generation N-channel power MOSFET housed in a TO-220AB package. It features a drain-source voltage of 400 V and a continuous drain current of 3.3 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 1.8 Ω at VGS = 10 V and a total gate charge of 20 nC. It supports a peak diode recovery dV/dt rating of 4.0 V/ns and repetitive avalanche energy up to 190 mJ. Maximum power dissipation reaches 50 W, with an operating junction temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Third-generation ruggedized design optimized for fast switching and low on-resistance.
• Capable of handling high dynamic dV/dt ratings during body diode reverse recovery.
• Repetitive avalanche rated for robustness against inductive load switching events.
• Facilitates ease of paralleling due to consistent thermal and electrical characteristics.

Single FETs, MOSFETs Applications

• High-voltage DC-to-DC converter circuits
• Inductive load switching applications
• Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix BE3 confirms lead-free and halogen-free compliance when sourcing. Ensure the procurement documentation explicitly references Vishay document number 91043 to confirm the component matches the specified TO-220AB package and electrical parameters. Cross-reference manufacturer part numbers against authorized distributor lists to validate authenticity.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 400 V blocking capability with moderate current handling. Evaluate the 1.8 Ω on-resistance against thermal management requirements, as it dictates conduction losses. Confirm that the gate drive circuitry can supply sufficient voltage to fully enhance the channel, given the threshold voltage specifications. Consider the TO-220AB package size for mechanical integration and heat sinking needs.

Single FETs, MOSFETs Part Context

This component belongs to the Vishay Siliconix IRF720 series of third-generation power MOSFETs. These devices are engineered to balance switching speed with cost-effectiveness for commercial and industrial applications. The TO-220AB package provides a universally accepted form factor for power dissipation levels around 50 W, ensuring broad industry compatibility.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include the IRF720PbF or standard IRF720 variants. Verify that substitute parts maintain identical pinout configurations and meet the required 400 V breakdown voltage and 3.3 A current ratings. Thermal resistance characteristics must be comparable to ensure equivalent performance under load.

Single FETs, MOSFETs FAQ

Is the IRF720PBF-BE3 rated for repetitive avalanche operation?

Yes, the datasheet specifies that the device is repetitive avalanche rated, supporting single pulse energies up to 190 mJ and repetitive avalanche currents of 3.3 A.

What is the maximum dynamic dV/dt rating for this MOSFET?

The device has a peak diode recovery dV/dt rating of 4.0 V/ns, which is controlled by the gate resistance Rg during testing.

How does the on-resistance vary with temperature?

The drain-source on-state resistance increases with junction temperature. Normalized curves indicate significant growth at higher temperatures compared to the 25 °C baseline.