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IRF7303TRPBFXTMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 30V 4.9A 8DSO-902. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF7303TRPBFXTMA1
- Description：MOSFET 2N-CH 30V 4.9A 8DSO-902
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4.9A (Ta)
- Rds On (Max) @ Id, Vgs：50mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：520pF @ 25V
- Power - Max：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：PG-DSO-8-902
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF7303TRPBFXTMA1
FET, MOSFET Arrays Overview
The IRF7303TRPBFXTMA1 is a dual N-channel silicon MOSFET manufactured by Infineon Technologies. It features a planar FET structure housed in an SO-8 surface-mount package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 5.3 A. The device exhibits a maximum on-resistance (Rds(on)) of 50 mΩ at a gate-source voltage of 10 V. It operates with a gate-source voltage range of ±20 V, a threshold voltage (Vgs(th)) of 1 V, and a total gate charge (Qg) of 25 nC. Power dissipation is rated at 2 W, with an operating temperature range from -55 °C to +150 °C.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration for integrated switching applications
- Planar technology ensuring robust performance and reliability
- Low on-resistance for efficient power handling
- Wide operating temperature range suitable for demanding environments
FET, MOSFET Arrays Applications
- DC-DC converter circuits
- Load switching applications
- Power management systems
FET, MOSFET Arrays Procurement Notes
Verify the complete part number including the suffix XTMA1 to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through official Infineon documentation prior to integration. Cross-reference datasheet revisions to validate parameter consistency against design requirements.
FET, MOSFET Arrays Selection Notes
Select this component for designs requiring dual N-channel switching within a compact SO-8 footprint. Ensure thermal management supports the 2 W power dissipation rating. Verify that the 30 V drain-source voltage provides adequate headroom for the specific circuit application.
FET, MOSFET Arrays Part Context
This component belongs to Infineon's OptiMOS family of power transistors. It utilizes advanced planar trench technology to achieve low on-resistance and fast switching speeds. The device is designed for general-purpose power switching applications where efficiency and size are critical factors.
FET, MOSFET Arrays Replacement Considerations
UMWIRF7303TR is listed as a parameter-equivalent alternative.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
