FET, MOSFET Arrays IRF7304PBF product image

IRF7304PBF

  • Description:MOSFET 2P-CH 20V 4.3A 8SO
  • Series:HEXFET®

SKU:3c38a9544b42 Category: Brand:

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IRF7304PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 20V 4.3A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7304PBF

  • Description:MOSFET 2P-CH 20V 4.3A 8SO
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:4.3A
  • Rds On (Max) @ Id, Vgs:90mOhm @ 2.2A, 4.5V
  • Vgs(th) (Max) @ Id:700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:610pF @ 15V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF7304PBF

IRF7304PBF

FET, MOSFET Arrays Overview

The IRF7304PBF is a dual P-channel enhancement mode MOSFET manufactured by Infineon Technologies. It utilizes Silicon technology and features an SOIC-8 surface-mount package. The device provides a drain-source breakdown voltage of 20 V and supports a continuous drain current of 4.3 A. Key electrical parameters include a maximum on-resistance of 90 mOhms, a gate-source voltage rating of -12 V to +12 V, and a power dissipation capacity of 2 W. The component operates within a temperature range of -55 °C to +150 °C.

FET, MOSFET Arrays Feature Summary

  • Dual independent P-channel configuration for complementary circuit applications
  • Enhancement mode operation with low on-resistance characteristics
  • Designed for vapor phase, infrared, or wave soldering techniques

FET, MOSFET Arrays Applications

  • Power management circuits requiring dual P-channel switching
  • Complementary driver stages in electronic systems
  • General purpose switching applications within specified voltage limits

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision and RoHS compliance status before integration, as manufacturing details may vary. Confirm that the SOIC-8 package dimensions align with the target PCB footprint. Ensure thermal management strategies account for the 2 W power dissipation limit under actual operating conditions. Cross-reference pinout configurations to prevent installation errors during assembly.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel solution is required with a 20 V voltage rating. The 90 mOhm on-resistance offers efficiency for moderate current loads up to 4.3 A. Consider the SOIC-8 package for surface-mount assembly compatibility. Evaluate thermal performance requirements against the 2 W dissipation capability for the intended application environment.

FET, MOSFET Arrays Part Context

The IRF7304PBF belongs to the IRF730x series of power MOSFETs from Infineon Technologies. This series focuses on providing reliable dual-channel solutions in compact packages. The part represents a standard silicon-based enhancement mode device suitable for general-purpose power switching tasks where dual polarity control is necessary.

FET, MOSFET Arrays Replacement Considerations

The IRF7304PBF-1 is a confirmed substitute part number within the same product family. Both components share identical electrical specifications and package configurations. Verify functional equivalence through official documentation before implementation.

IRF7304PBFIRF7304PBF

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