IRF7324D1TR

Single FETs, MOSFETs Overview

The IRF7324D1TR is a dual N-channel power MOSFET manufactured by Infineon Technologies. It utilizes OptiMOS technology and is housed in an SO-8 surface-mount package. The device features a drain-source voltage rating of 20 V and a continuous drain current capacity of 5.6 A at 25°C. Key electrical characteristics include a maximum on-resistance of 22 milliohms at a gate-source voltage of 4.5 V, with a typical gate charge of 9 nC. The component supports a junction temperature range from -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

• Dual N-channel configuration for efficient half-bridge or synchronous rectification applications
• OptiMOS technology providing low conduction losses and optimized switching performance
• Logic-level gate drive capability enabling direct interface with standard logic outputs
• Robust thermal design supporting high junction temperatures up to 175°C

Single FETs, MOSFETs Applications

• Synchronous rectification in DC-DC converters
• Half-bridge driver stages in motor control circuits
• Power management modules in portable electronic devices
• Load switching applications requiring low on-resistance

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'TR' indicates tape-and-reel packaging when sourcing. Confirm RoHS compliance status through official Infineon documentation as manufacturing processes may evolve. Check for obsolescence notices or lifecycle changes directly from the manufacturer before finalizing procurement plans to ensure supply continuity.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a compact dual N-channel solution with low Rds(on). Ensure the operating voltage does not exceed the 20 V drain-source limit. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance. Consider the SO-8 package thermal resistance for adequate heat dissipation in the target application environment.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS family of power MOSFETs, designed for general-purpose power switching. The IRF73xx series typically offers balanced performance between conduction and switching losses. The dual configuration allows for space-saving designs in bridge topologies compared to using discrete single-channel devices.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement matches the 20 V voltage rating, 5.6 A current capacity, and SO-8 package dimensions. Verify pinout compatibility and electrical parameters such as Rds(on) and Qg to maintain circuit performance.