IRF7325PBF

Description：MOSFET 2P-CH 12V 7.8A 8SO
Series：HEXFET®

SKU:9635bd8d44c1 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF7325PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 12V 7.8A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7325PBF

Description：MOSFET 2P-CH 12V 7.8A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：12V
Current - Continuous Drain (Id) @ 25°C：7.8A
Rds On (Max) @ Id, Vgs：24mOhm @ 7.8A, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：2020pF @ 10V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7325PBF

IRF7325PBF

FET, MOSFET Arrays Overview

The IRF7325PBF is a dual P-Channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a SO-8 surface-mount package with a maximum drain-source voltage of -12 V and a continuous drain current of -7.8 A at 25°C. The device utilizes Trench Technology to achieve ultra-low on-resistance, specified as a maximum of 24 mΩ at VGS = -4.5V. Key electrical parameters include a total gate charge of 22 nC typ., a junction-to-ambient thermal resistance of 62.5 °C/W, and an operating temperature range from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

Dual P-Channel configuration in a single low-profile SO-8 package
Ultra-low on-resistance achieved through advanced Trench Technology
Enhanced thermal characteristics via customized leadframe design

FET, MOSFET Arrays Applications

Power management circuits requiring compact dual-channel solutions
Low-voltage DC-DC converter designs
Battery-powered equipment utilizing multiple power switches

FET, MOSFET Arrays Procurement Notes

Verify the component status before procurement planning. Official documentation indicates this product has reached end-of-life or obsolescence stages. Confirm availability through authorized distributors or secondary markets. Ensure that any replacement sourcing maintains compatibility with existing board layouts and thermal requirements.

FET, MOSFET Arrays Selection Notes

Select this component for applications demanding high efficiency in low-voltage environments. The dual-channel architecture reduces board space compared to discrete single-channel alternatives. Evaluate thermal derating curves for operation above 25°C ambient temperatures to ensure safe junction limits are maintained during continuous load conditions.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family of power MOSFETs known for ruggedized device design and reliability. The manufacturer employs specialized processing techniques to optimize silicon area utilization. The SO-8 package variant includes modifications for improved heat dissipation and supports vapor phase, infrared, or wave soldering processes.