IRF7331TRPBF

$0.76

Description：MOSFET 2N-CH 20V 7A 8SO
Series：HEXFET®

SKU:7accae31984a Category: FET, MOSFET Arrays Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IRF7331TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 20V 7A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7331TRPBF

Description：MOSFET 2N-CH 20V 7A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：7A
Rds On (Max) @ Id, Vgs：30mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1340pF @ 16V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7331TRPBF

IRF7331TRPBF

FET, MOSFET Arrays Overview

The IRF7331TRPBF is a dual N-channel HEXFET power MOSFET in an SO-8 package. It features a 20 V drain-source voltage rating and a maximum continuous drain current of 7.0 A at 25°C, reducing to 5.5 A at 70°C. The device offers a low on-resistance of 30 mΩ at VGS = 4.5V and 45 mΩ at VGS = 2.5V. Total gate charge is typically 13 nC. Thermal resistance from junction to ambient is 62.5 °C/W, with a maximum junction temperature of 150°C.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration for space-efficient designs
Ultra-low on-resistance per silicon area
Customized leadframe for enhanced thermal characteristics
Multiple-die capability within the SO-8 package

FET, MOSFET Arrays Applications

Battery management systems
Load management applications
Power switching circuits

FET, MOSFET Arrays Procurement Notes

Verify the component authenticity by checking the manufacturer's marking against official datasheet specifications. Confirm that the ordering suffix TRPBF indicates tape and reel packaging. Ensure the part meets RoHS compliance standards as specified in the product documentation before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage applications. The SO-8 package supports vapor phase, infrared, or wave soldering techniques. Consider the thermal derating factor of 16 mW/°C for high-temperature environments to ensure reliable operation within the specified junction temperature limits.

FET, MOSFET Arrays Part Context

This device belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies (formerly International Rectifier). The series utilizes advanced processing techniques to achieve low on-resistance. The IRF7331 variant specifically targets consumer market applications requiring efficient power handling in a surface-mount format.