IRF7379TRPBF

$0.75

Description：MOSFET N/P-CH 30V 5.8A/4.3A 8SO
Series：HEXFET®

SKU:f500ebfcd871 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF7379TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N/P-CH 30V 5.8A/4.3A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7379TRPBF

Description：MOSFET N/P-CH 30V 5.8A/4.3A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：5.8A, 4.3A
Rds On (Max) @ Id, Vgs：45mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：520pF @ 25V
Power - Max：2.5W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7379TRPBF

IRF7379TRPBF

FET, MOSFET Arrays Overview

The IRF7379TRPBF is a dual N-channel and P-channel power MOSFET array in an SO-8 surface-mount package. It features a maximum drain-source voltage of 30V for the N-channel and -30V for the P-channel. The continuous drain current is rated at 5.8A for the N-channel and -4.3A for the P-channel at 25°C ambient temperature. The static on-resistance is typically 0.032Ω for the N-channel and -0.037Ω for the P-channel. Total gate charge is typically 22nC for the N-channel and 25nC for the P-channel.

FET, MOSFET Arrays Feature Summary

Complementary half-bridge configuration with integrated N-channel and P-channel devices
Ultra-low on-resistance achieved through fifth-generation HEXFET processing techniques
Fully avalanche rated for ruggedized device design and reliability
Customized leadframe in SO-8 package for enhanced thermal characteristics

FET, MOSFET Arrays Applications

Power applications requiring compact board space solutions
Switching circuits utilizing complementary half-bridge topologies
Surface mount assembly via vapor phase, infrared, or wave soldering

FET, MOSFET Arrays Procurement Notes

Verify component authenticity by checking markings against official datasheet specifications. Confirm the presence of the lead-free designation and manufacturer logo. Ensure the package matches the SO-8 outline dimensions provided in the documentation. Validate that the part number suffix corresponds to the tape and reel packaging format.

FET, MOSFET Arrays Selection Notes

Select this component when a matched N-channel and P-channel pair is required in a single footprint. The low on-resistance supports efficient power switching. Verify that the 30V breakdown voltage meets circuit requirements. Consider the thermal resistance rating for heat dissipation needs in the specific application environment.

FET, MOSFET Arrays Part Context

This device belongs to the HEXFET Power MOSFET family from Infineon Technologies. It utilizes advanced processing techniques to minimize silicon area resistance. The product line emphasizes efficiency and reliability for various power management applications. The SO-8 package modification allows for multiple-die capability within a standard surface-mount form factor.