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IRF7389PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N/P-CH 30V 8SO. Review the specifications below when checking this part for your BOM.
The IRF7389PBF is a dual N-channel and P-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes OptiMOS technology to deliver low on-resistance and high switching efficiency within an SOIC-8 surface-mount package. The device supports a drain-source voltage of 30V, with continuous drain currents rated at 5.3A for the N-channel and 7.3A for the P-channel. Key electrical parameters include a maximum RDS(on) of 46mΩ for the N-channel and 23mΩ for the P-channel at VGS=10V. The component operates across a temperature range of -55°C to +150°C with a power dissipation capability of 2.5W.
Verify the specific suffix against official documentation to confirm package type and tape-and-reel specifications. Ensure the ordering part number matches the required lead-free status and RoHS compliance standards defined by Infineon. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing procurement orders.
Select this component when a matched N/P pair is required for synchronous applications without occupying excessive board space. Evaluate the 30V rating against system voltage headroom requirements. Consider the SOIC-8 thermal resistance characteristics relative to the expected ambient temperature and heat sinking capabilities of the target PCB layout.
This device belongs to the Infineon OptiMOS family of power transistors, designed for general-purpose switching applications. It complements single-channel variants by offering integrated complementary functionality. The product line emphasizes miniaturization and efficiency improvements through advanced trench gate technology.
Consult official cross-reference tools for verified substitutes. Ensure any replacement maintains identical pinout compatibility and meets or exceeds the original 30V breakdown voltage and current handling capabilities.
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