FET, MOSFET Arrays IRF7389PBF product image

IRF7389PBF

  • Description:MOSFET N/P-CH 30V 8SO
  • Series:HEXFET®

SKU:e333396454d1 Category: Brand:

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IRF7389PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N/P-CH 30V 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7389PBF

  • Description:MOSFET N/P-CH 30V 8SO
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:29mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:650pF @ 25V
  • Power - Max:2.5W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF7389PBF

IRF7389PBF

FET, MOSFET Arrays Overview

The IRF7389PBF is a dual N-channel and P-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes OptiMOS technology to deliver low on-resistance and high switching efficiency within an SOIC-8 surface-mount package. The device supports a drain-source voltage of 30V, with continuous drain currents rated at 5.3A for the N-channel and 7.3A for the P-channel. Key electrical parameters include a maximum RDS(on) of 46mΩ for the N-channel and 23mΩ for the P-channel at VGS=10V. The component operates across a temperature range of -55°C to +150°C with a power dissipation capability of 2.5W.

FET, MOSFET Arrays Feature Summary

  • Dual configuration integrating one N-channel and one P-channel transistor in a single compact package.
  • OptiMOS technology provides optimized gate charge characteristics for efficient switching performance.
  • Robust thermal design enables reliable operation under high-power density conditions.

FET, MOSFET Arrays Applications

  • Synchronous rectification in DC/DC converter circuits
  • Low-side and high-side switching in motor control applications
  • Power management modules requiring complementary channel pairs

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix against official documentation to confirm package type and tape-and-reel specifications. Ensure the ordering part number matches the required lead-free status and RoHS compliance standards defined by Infineon. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a matched N/P pair is required for synchronous applications without occupying excessive board space. Evaluate the 30V rating against system voltage headroom requirements. Consider the SOIC-8 thermal resistance characteristics relative to the expected ambient temperature and heat sinking capabilities of the target PCB layout.

FET, MOSFET Arrays Part Context

This device belongs to the Infineon OptiMOS family of power transistors, designed for general-purpose switching applications. It complements single-channel variants by offering integrated complementary functionality. The product line emphasizes miniaturization and efficiency improvements through advanced trench gate technology.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure any replacement maintains identical pinout compatibility and meets or exceeds the original 30V breakdown voltage and current handling capabilities.

IRF7389PBFIRF7389PBF

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