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IRF740B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 400V 10A TO220-3. Review the specifications below when checking this part for your BOM.
The IRF740B is a 400V N-Channel enhancement mode power MOSFET manufactured using planar DMOS technology. It features a maximum continuous drain current of 10A at 25°C and a static drain-source on-resistance of 0.54Ω at VGS = 10V. The device supports a pulsed drain current of 40A, operates within a junction temperature range of -55°C to +150°C, and provides a single pulsed avalanche energy rating of 450mJ.
Verify the manufacturer origin, as the component was originally produced by Fairchild Semiconductor. Confirm that the specific ordering suffix matches the required package style (TO-220 or TO-220F) and ensure compliance with relevant RoHS directives before procurement.
Select this component when designing circuits requiring robust high-voltage handling up to 400V alongside reliable avalanche energy tolerance. The low gate charge and optimized thermal resistance make it suitable for applications demanding efficient switching and effective heat dissipation under moderate load conditions.
This part belongs to the IRF series of N-Channel power MOSFETs. It represents a standard discrete semiconductor solution designed for general-purpose power switching applications where high voltage blocking capability and moderate current handling are primary requirements.
IRFS740B
The peak diode recovery dv/dt rating is 5.5 V/ns.
The normalized drain-source on-resistance increases as the junction temperature rises from -55°C to +150°C.
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