Single FETs, MOSFETs IRF740B product image

IRF740B

  • Description:MOSFET N-CH 400V 10A TO220-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube

SKU:97844375eec3 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

IRF740B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 400V 10A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF740B

  • Description:MOSFET N-CH 400V 10A TO220-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):400 V
  • Current - Continuous Drain (Id) @ 25°C:10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:540mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:53 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):134W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220-3
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for IRF740B

IRF740B

Single FETs, MOSFETs Overview

The IRF740B is a 400V N-Channel enhancement mode power MOSFET manufactured using planar DMOS technology. It features a maximum continuous drain current of 10A at 25°C and a static drain-source on-resistance of 0.54Ω at VGS = 10V. The device supports a pulsed drain current of 40A, operates within a junction temperature range of -55°C to +150°C, and provides a single pulsed avalanche energy rating of 450mJ.

Single FETs, MOSFETs Feature Summary

  • Utilizes proprietary planar DMOS technology for minimized on-state resistance and superior switching performance
  • Capable of withstanding high energy pulses in both avalanche and commutation modes
  • Features improved dv/dt capability and fast switching characteristics

Single FETs, MOSFETs Applications

  • High efficiency switch mode power supplies
  • Electronic lamp ballasts based on half bridge topologies

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin, as the component was originally produced by Fairchild Semiconductor. Confirm that the specific ordering suffix matches the required package style (TO-220 or TO-220F) and ensure compliance with relevant RoHS directives before procurement.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust high-voltage handling up to 400V alongside reliable avalanche energy tolerance. The low gate charge and optimized thermal resistance make it suitable for applications demanding efficient switching and effective heat dissipation under moderate load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the IRF series of N-Channel power MOSFETs. It represents a standard discrete semiconductor solution designed for general-purpose power switching applications where high voltage blocking capability and moderate current handling are primary requirements.

Single FETs, MOSFETs Replacement Considerations

IRFS740B

Single FETs, MOSFETs FAQ

What is the peak diode recovery dv/dt rating?

The peak diode recovery dv/dt rating is 5.5 V/ns.

How does the on-resistance vary with temperature?

The normalized drain-source on-resistance increases as the junction temperature rises from -55°C to +150°C.

IRF740BIRF740B

Click on the inquiry