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IRF740SPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 400V 10A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRF740SPBF
- Description：MOSFET N-CH 400V 10A D2PAK
- Series：-
- Mfr：Vishay Siliconix
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：400 V
- Current - Continuous Drain (Id) @ 25°C：10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：550mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：63 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta), 125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for IRF740SPBF
Single FETs, MOSFETs Overview
The IRF740SPBF is a third-generation N-Channel Power MOSFET from Vishay Siliconix, housed in a surface-mount D2PAK (TO-263) package. It features a drain-source voltage of 400 V and a continuous drain current of 10 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 0.55 Ω at VGS = 10 V and a total gate charge of 63 nC. It supports repetitive avalanche energy ratings and includes dynamic dV/dt specifications for robust switching performance.
Single FETs, MOSFETs Feature Summary
- Surface-mount construction in a D2PAK (TO-263) package designed for high-current applications
- Repetitive avalanche rated capability for ruggedized operation
- Dynamic dV/dt rating to manage fast switching transitions
- Optimized for ease of paralleling and simple drive requirements
Single FETs, MOSFETs Applications
- High-frequency power conversion circuits
- DC-DC converter topologies requiring surface-mount integration
- Motor control systems utilizing high-voltage switches
- General-purpose power switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm lead-free status and tape-and-reel availability. Ensure that the procurement channel sources components directly from authorized distributors to guarantee authenticity and compliance with RoHS directives. Cross-reference the document revision date during acquisition to ensure access to the latest technical specifications.
Single FETs, MOSFETs Selection Notes
Select this component when a surface-mount solution is required for high-voltage switching applications. The D2PAK package offers lower thermal resistance compared to through-hole alternatives while maintaining high current handling capabilities. Evaluate the 0.55 Ω on-resistance against system conduction loss requirements and verify that the 400 V breakdown voltage exceeds the maximum circuit operating voltage.
Single FETs, MOSFETs Part Context
This part belongs to the IRF740S series of third-generation power MOSFETs manufactured by Vishay Siliconix. It utilizes silicon technology within a D2PAK (TO-263) surface-mount footprint. The series is engineered to provide a balance of low on-resistance, fast switching speeds, and cost-effectiveness for modern power electronics designs.
Single FETs, MOSFETs Replacement Considerations
The SiHF740S-GE3 is an equivalent lead-free and halogen-free variant within the same series. Verify pinout compatibility and thermal characteristics when substituting between leaded and lead-free versions of the D2PAK package.
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