IRF7478PBF

Description：MOSFET N-CH 60V 7A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:c669ae1d583e Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRF7478PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 7A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF7478PBF

Description：MOSFET N-CH 60V 7A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：26mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：31 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1740 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for IRF7478PBF

IRF7478PBF

Single FETs, MOSFETs Overview

The IRF7478PbF is a lead-free HEXFET power MOSFET in an SO-8 package. It features a 60V drain-source breakdown voltage and a continuous drain current of 7.0A at 25°C. The device offers a maximum on-resistance of 26mΩ at VGS=10V and 30mΩ at VGS=4.5V. Key electrical parameters include a total gate charge of 21nC, a single pulse avalanche energy of 140mJ, and a peak diode recovery dv/dt of 3.7V/ns. Thermal resistance from junction to ambient is 50°C/W.

Single FETs, MOSFETs Feature Summary

Low gate-to-drain charge designed to reduce switching losses
Fully characterized capacitance including effective COSS to simplify design
Fully characterized avalanche voltage and current ratings

Single FETs, MOSFETs Applications

High frequency DC-DC converters
Switching mode power supplies (SMPS)

Single FETs, MOSFETs Procurement Notes

Verify the component status as discontinued or obsolete through official Infineon channels before finalizing designs. Confirm that the SO-8 tape and reel packaging meets specific handling requirements. Ensure compliance with RoHS standards and check for any available replacement part numbers within the manufacturer's portfolio to mitigate supply chain risks during production.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low switching losses and high-frequency operation. Evaluate the thermal performance against the 50°C/W junction-to-ambient resistance. Consider the 60V rating for margin in 48V systems. Verify that the gate drive voltage supports the specified RDS(on) thresholds for optimal efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes G174/G32 process technology. The SO-8 surface-mount package provides a compact form factor suitable for dense PCB layouts. The product is designated as lead-free, adhering to environmental manufacturing standards.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not provided in the source material. Consult official cross-reference tools for potential alternatives.