IRF7501TRPBF

$0.77

Description：MOSFET 2N-CH 20V 2.4A MICRO8
Series：HEXFET®

SKU:3e12a1750490 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF7501TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 20V 2.4A MICRO8. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7501TRPBF

Description：MOSFET 2N-CH 20V 2.4A MICRO8
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：2.4A
Rds On (Max) @ Id, Vgs：135mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id：700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：260pF @ 15V
Power - Max：1.25W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package：Micro8™
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7501TRPBF

IRF7501TRPBF

FET, MOSFET Arrays Overview

The IRF7501TRPBF is a dual N-channel HEXFET Power MOSFET in a Micro8 package. It features a drain-source voltage of 20 V and a continuous drain current of 2.4 A at 25°C. The maximum on-resistance is 0.135 Ω at VGS = 4.5 V. Gate-to-source voltage is rated at ±12 V, with a total gate charge of 5.3 nC. Thermal resistance junction-to-ambient is 100 °C/W, and the operating temperature range spans -55 to +150 °C.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration within a compact Micro8 footprint
Ultra-low on-resistance utilizing Fifth Generation HEXFET technology
Fast switching speed for efficient power management
Low profile design suitable for space-constrained portable electronics

FET, MOSFET Arrays Applications

PCMCIA cards
Portable electronics
Thin application environments

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm date codes and markings against datasheet specifications. Ensure storage conditions comply with moisture sensitivity level requirements. Check for lead-free compliance documentation prior to assembly.

FET, MOSFET Arrays Selection Notes

Evaluate thermal performance based on PCB copper area and ambient conditions. Verify gate drive voltage compatibility with the specified threshold characteristics. Consider pulsed current ratings for transient load scenarios. Assess package thermal resistance limits for the specific mounting environment.

FET, MOSFET Arrays Part Context

This component belongs to the HEXFET family, known for advanced processing techniques that minimize on-resistance per silicon area. The Micro8 package offers half the footprint of standard SO-8 packages while maintaining an SOIC outline, facilitating high-density board layouts.