IRF7754TRPBF

FET, MOSFET Arrays Overview

The IRF7754TRPBF is a HEXFET P-channel power MOSFET in an 8-TSSOP package. It features a drain-source voltage of -12V and a continuous drain current of -5.5A at 25°C. The device exhibits an on-resistance of 25mΩ at VGS=-4.5V and ID=-5.4A, with a gate charge of 22nC. Operating temperatures range from -55°C to +150°C junction temperature.

FET, MOSFET Arrays Feature Summary

• Ultra-low on-resistance for high efficiency
• Very small TSSOP-8 footprint saving PCB space
• Low profile design suitable for thin environments

FET, MOSFET Arrays Applications

• Battery management systems
• Load management circuits
• Portable electronics
• PCMCIA cards

FET, MOSFET Arrays Procurement Notes

Verify the component status as discontinued or end-of-life before finalizing designs. Confirm that the TSSOP-8 package dimensions match the target PCB layout constraints. Ensure thermal derating calculations account for the specified junction-to-ambient resistance values under actual operating conditions.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring low voltage P-channel switching in compact form factors. Evaluate the thermal performance against the maximum power dissipation limits. Consider the gate threshold voltage requirements relative to the driving logic levels to ensure reliable turn-on characteristics.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET Power MOSFET family from Infineon Technologies (formerly International Rectifier). It utilizes advanced processing techniques to achieve low on-resistance per silicon area. The TSSOP-8 package offers significantly less footprint compared to standard SO-8 packages.

FET, MOSFET Arrays Replacement Considerations

Check for available alternative P-channel MOSFETs with compatible -12V ratings and similar RDS(on) specifications. Verify pinout compatibility if substituting within the same package type. Review updated datasheets for any changes in thermal or electrical parameters.