IRF7799L2TR1PBF

Single FETs, MOSFETs Overview

The IRF7799L2TR1PBF is a single N-channel HEXFET power MOSFET utilizing DirectFET L8 packaging. It features a drain-source voltage of 250 V and a maximum on-resistance of 38 mΩ at 10 V gate drive. The device supports a continuous drain current of 35 A at case temperature of 25°C, with a total gate charge of 110 nC. It operates within a junction temperature range of -55°C to +175°C and offers dual-sided cooling compatibility.

Single FETs, MOSFETs Feature Summary

• Combines advanced HEXFET silicon technology with low-profile DirectFET packaging for minimized footprint and thermal resistance.
• Optimized for high-frequency switching and synchronous rectification applications to reduce total system losses.
• Features high Cdv/dt immunity and industrial qualification standards for enhanced reliability in demanding environments.

Single FETs, MOSFETs Applications

• High performance isolated converter primary switch sockets
• Synchronous rectification circuits
• Industrial switched-mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific TR1 suffix indicates a mini-reel configuration containing 1000 units, distinct from the standard 4000-unit reel. Confirm component availability status as end-of-life notices may apply. Ensure procurement channels support the required tape and reel format for surface mount assembly processes.

Single FETs, MOSFETs Selection Notes

Select this component when a 250 V rating is required alongside low conduction losses in a compact form factor. Evaluate thermal management requirements against the dual-sided cooling capability of the DirectFET package. Consider the gate charge specifications for driving efficiency in high-speed switching topologies compared to standard packages.

Single FETs, MOSFETs Part Context

This part belongs to the DirectFET family, designed to replace larger packages like D2PAK while maintaining or improving thermal performance. It integrates the latest silicon technology into an isometric lead frame structure, enabling efficient heat transfer through both the top drain and bottom substrate surfaces.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same DirectFET L8 series offering different voltage or resistance ratings. Verify that any substitute maintains the necessary 250 V breakdown voltage and compatible gate threshold characteristics for existing driver circuits.

Single FETs, MOSFETs FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +175°C.

Does the package support dual-sided cooling?

Yes, the DirectFET L8 package is explicitly designed to be compatible with dual-sided cooling to maximize thermal transfer.