ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRENCH <= 40V
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The IRF7805ZTRPBFXTMA1 is a single N-channel HEXFET power MOSFET from Infineon Technologies, housed in an SO-8 surface-mount package. It features a drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 16 A at 25°C. The device exhibits a maximum on-resistance (RDS(on)) of 8.7 mΩ at 4.5 V gate drive. Key electrical parameters include a typical gate charge (QG) of 22 nC at 4.5 V and a gate-drain charge (Qgd) of 8.6 nC. The thermal resistance junction-to-ambient (RthJA) is 50 K/W, with a maximum junction temperature of 150°C and a maximum gate-source voltage of ±12 V.
Feature Summary
- Utilizes advanced HEXFET technology for low on-resistance and high efficiency
- Designed for surface-mount applications with compact SO-8 packaging
- Optimized gate charge characteristics for improved switching performance
Applications
- Low-voltage DC-DC converter circuits
- Power management systems requiring efficient switching
- Battery-powered equipment load switches
Procurement Notes
Verify the specific suffix ZTRPBFXTMA1 against official Infineon documentation to confirm tape-and-reel packaging and material compliance. Cross-reference part numbers carefully as variations exist within the IRF7805 family. Confirm lifecycle status and RoHS compliance directly with the manufacturer or authorized distributors before procurement.
Selection Notes
Select this component for applications requiring a 30 V rating and high current handling in a small footprint. Consider the 8.7 mΩ RDS(on) for thermal management in low-voltage designs. Ensure the gate drive voltage supports the specified threshold range for optimal conduction. Evaluate the SO-8 package constraints for PCB layout and thermal dissipation requirements.
Part Context
This part belongs to the IRF7805 series of N-channel power MOSFETs. It shares architectural similarities with other devices in the line but differs in specific electrical ratings and packaging configurations. The series is designed for general-purpose power switching applications where size and efficiency are critical factors.
Replacement Considerations
Publicly confirmed substitute part numbers include FDS8880 from onsemi. Verify pinout compatibility and electrical parameter equivalence when considering alternative components for design updates.
