IRF7901D1

FET, MOSFET Arrays Overview

The IRF7901D1 is a dual N-channel power MOSFET manufactured by Infineon Technologies. It integrates two independent N-channel field-effect transistors within a single package, designed for efficient switching and amplification applications. The device utilizes silicon gate technology to achieve low on-resistance and fast switching speeds. Key electrical characteristics include a drain-source voltage rating of 30V and a continuous drain current capability of 6.2A per channel at 25°C ambient temperature. The component features an on-resistance of 0.038 ohms at a gate-source voltage of 10V, ensuring minimal conduction losses in high-current scenarios.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrating two independent MOSFETs in one package
• Low on-resistance for enhanced power efficiency and reduced heat generation
• Silicon gate technology enabling fast switching performance
• Lead-free and halogen-free construction compliant with environmental standards

FET, MOSFET Arrays Applications

• DC-DC converter circuits
• Motor control systems
• Power management modules
• Load switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix D1 against official Infineon documentation to confirm pinout and thermal specifications. Ensure compatibility with existing PCB footprints and thermal management requirements. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement decisions.

FET, MOSFET Arrays Selection Notes

Select this component when space-constrained designs require dual N-channel switching capabilities. Consider the 30V voltage rating and 6.2A current capacity for appropriate load matching. Evaluate thermal dissipation needs based on the SO-8 package limitations and expected operating temperatures.

FET, MOSFET Arrays Part Context

This part belongs to Infineon's HEXFET power MOSFET portfolio, known for robust performance in power electronics. The dual-channel design simplifies circuit layout compared to using discrete single MOSFETs. It serves as a standard solution for mid-power switching applications requiring reliable semiconductor components.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure any replacement matches the 30V VDS, 6.2A ID, and SO-8 package dimensions. Verify that alternative parts maintain similar RDS(on) and switching characteristics.