IRF7902PBF

Description：MOSFET 2N-CH 30V 6.4A/9.7A 8SO
Series：HEXFET®

SKU:3d8fb1276158 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF7902PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 30V 6.4A/9.7A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7902PBF

Description：MOSFET 2N-CH 30V 6.4A/9.7A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：6.4A, 9.7A
Rds On (Max) @ Id, Vgs：22.6mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id：2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs：6.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：580pF @ 15V
Power - Max：1.4W, 2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7902PBF

IRF7902PBF

FET, MOSFET Arrays Overview

The IRF7902PBF is a dual N-channel HEXFET power MOSFET in an SO-8 package. It integrates two independent transistors: Q1 (Control FET) and Q2 (Synchronous FET). Key electrical parameters include a drain-to-source voltage of 30V for both channels. At VGS = 10V, the maximum on-resistance is 22.6mΩ for Q1 and 14.4mΩ for Q2. Continuous drain currents are 6.4A for Q1 and 9.7A for Q2 at 25°C ambient temperature. The device features a maximum gate-to-source voltage of ±20V and operates within a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

Dual configuration with distinct control and synchronous functions
Low on-resistance optimized for 4.5V gate drive
Characterized avalanche voltage and current ratings
Improved body diode reverse recovery performance

FET, MOSFET Arrays Applications

Point-of-load converters in notebook computers
Server power supply circuits
Graphics card power regulation
Game console power management
Set-top box voltage conversion

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm datasheet revision matches manufacturing date codes. Ensure storage conditions comply with moisture sensitivity levels specified for SO-8 packages. Validate RoHS compliance documentation prior to integration into final assemblies.

FET, MOSFET Arrays Selection Notes

Select this component for low-voltage synchronous rectification applications requiring compact surface-mount packaging. Evaluate thermal resistance characteristics against expected load profiles. Consider gate charge requirements relative to driver capabilities. Verify that operating voltages remain within the 30V drain-to-source limit under all transient conditions.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes silicon technology to achieve low on-resistance per silicon area. The SO-8 package provides a compact solution for dual-channel applications where space constraints are critical compared to traditional TO-220 or DPAK formats.