IRF7902TRPBF

$0.34

Description：MOSFET 2N-CH 30V 6.4A/9.7A 8SO
Series：HEXFET®

SKU:386a80e23f8b Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF7902TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 30V 6.4A/9.7A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7902TRPBF

Description：MOSFET 2N-CH 30V 6.4A/9.7A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：6.4A, 9.7A
Rds On (Max) @ Id, Vgs：22.6mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id：2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs：6.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：580pF @ 15V
Power - Max：1.4W, 2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7902TRPBF

IRF7902TRPBF

FET, MOSFET Arrays Overview

The IRF7902TRPBF is a dual N-channel HEXFET power MOSFET in an SO-8 package. It integrates a control FET (Q1) and a synchronous FET (Q2). Q1 features a 30V drain-source voltage, 6.4A continuous current, and 22.6mΩ on-resistance at 10V gate drive. Q2 offers 30V, 9.7A, and 14.4mΩ on-resistance. The device supports a ±20V gate rating, operates from -55°C to +150°C, and includes fully characterized avalanche capabilities.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration integrating control and synchronous switching elements within a single surface-mount package.
Optimized low on-resistance characteristics at 4.5V gate drive for efficient logic-level operation.
Fully characterized avalanche voltage and current ratings for robust performance under inductive load conditions.
Enhanced body diode reverse recovery performance to minimize switching losses during synchronous rectification.

FET, MOSFET Arrays Applications

Point-of-load converters in notebook computers
Server power supply circuits
Graphics card voltage regulation modules
Game console power management systems
Set-top box DC-DC conversion

FET, MOSFET Arrays Procurement Notes

Verify the component status as obsolete or end-of-life before finalizing designs. Confirm that the TRPBF suffix indicates tape and reel packaging with lead-free composition. Ensure compatibility with existing SO-8 footprints and validate thermal dissipation requirements against the specified junction-to-ambient resistance values.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring two matched N-channel switches in a compact form factor. The distinct Rds(on) values for Q1 and Q2 allow optimization for different current paths within a half-bridge topology. Consider the 30V breakdown limit and ensure gate drive voltages remain within the ±20V maximum rating to prevent oxide degradation.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a standard SO-8 surface-mount package. The device is designed for consumer electronics markets and complies with RoHS directives for restricted hazardous substances.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

FET, MOSFET Arrays FAQ

What is the difference between Q1 and Q2 in the IRF7902?

Q1 is the control FET rated for 6.4A continuous current with 22.6mΩ on-resistance, while Q2 is the synchronous FET rated for 9.7A with lower 14.4mΩ on-resistance.