FET, MOSFET Arrays IRF8313TRPBF product image

IRF8313TRPBF

$1.06
  • Description:MOSFET 2N-CH 30V 9.7A 8SO
  • Series:HEXFET®

SKU:ce2534af43ff Category: Brand:

  
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IRF8313TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 30V 9.7A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF8313TRPBF

  • Description:MOSFET 2N-CH 30V 9.7A 8SO
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:9.7A
  • Rds On (Max) @ Id, Vgs:15.5mOhm @ 9.7A, 10V
  • Vgs(th) (Max) @ Id:2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs:9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:760pF @ 15V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF8313TRPBF

IRF8313TRPBF

FET, MOSFET Arrays Overview

The IRF8313TRPbF is an N-channel HEXFET Power MOSFET housed in a lead-free SO-8 surface-mount package. It features a drain-to-source voltage rating of 30V and a continuous drain current capability of up to 9.7A at 25°C ambient temperature. The device incorporates optimized silicon technology designed for synchronous buck operation, providing a maximum on-resistance of 15.5mΩ at VGS=10V and a total gate charge of 6.0nC typ. Fully characterized avalanche characteristics ensure reliability under transient conditions.

FET, MOSFET Arrays Feature Summary

  • Optimized for synchronous buck operation with low RDS(on) and gate charge to minimize conduction and switching losses
  • Fully characterized avalanche voltage and current ratings for enhanced robustness
  • 100% tested for gate resistance (RG) to ensure consistent switching performance
  • Lead-free construction qualified to 260°C reflow temperatures

FET, MOSFET Arrays Applications

  • Load Switch
  • DC/DC Conversion
  • High efficiency DC-DC converters for notebook processors

FET, MOSFET Arrays Procurement Notes

Verify the ordering suffix TRPbF corresponds to the tape and reel packaging format containing 4000 units per standard pack. Confirm that the component meets RoHS compliance and halogen-free requirements as specified in the manufacturer's qualification data. Ensure the application environment remains within the absolute maximum ratings for junction temperature and thermal resistance.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring high-efficiency power conversion where low gate drive loss is critical. The SO-8 package offers a compact footprint suitable for space-constrained designs. Evaluate the thermal management strategy based on the junction-to-ambient thermal resistance of 62.5°C/W when operating without a heatsink. Consider the 20V maximum gate-source rating when designing the driver circuitry.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies (formerly International Rectifier). The 'TRPbF' suffix indicates a specific packaging configuration using a tape and reel format, distinguishing it from the tube-packaged IRF8313PbF variant. Both variants share identical electrical specifications and pinouts.

FET, MOSFET Arrays Replacement Considerations

The IRF8313PbF serves as the direct tube-packaged equivalent with identical electrical parameters. When substituting, verify that the alternative package type accommodates the required PCB layout dimensions and thermal dissipation paths.

IRF8313TRPBFIRF8313TRPBF
$1.06
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